Product Information

STL130N6F7

STL130N6F7 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0725 ea
Line Total: USD 1.07

8939 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2830 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STL130N6F7
STMicroelectronics

1 : USD 1.2886
10 : USD 1.2819
25 : USD 1.2752
100 : USD 1.2686
250 : USD 1.2433
500 : USD 1.2433
1000 : USD 1.2433

5820 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

STL130N6F7
STMicroelectronics

3000 : USD 1.1971

8813 - WHS 3


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

STL130N6F7
STMicroelectronics

1 : USD 1.0395
10 : USD 0.846
30 : USD 0.7413
100 : USD 0.6205
500 : USD 0.4371
1000 : USD 0.4129

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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The STMicroelectronics STL130N6F7 is a Power MOSFET in a PowerFLAT 5x6 package that provides higher power density and improved thermal and current handling capabilities, making it suitable for high current and high power applications. The device is based on the N-channel FET technology and features excellent figures of merit by providing low on-state resistance and high current capability. It features a maximum drain-source voltage of 60 V, and a typical on-state resistance of 3 mOhm. The output current capabilities of the STL130N6F7 make it suitable for applications that require high current delivery with minimal power loss.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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