Product Information

STL12P6F6

STL12P6F6 electronic component of STMicroelectronics

Datasheet
MOSFET P-CH 60V 0.13Ohm 3A STripFET VI
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.799 ea
Line Total: USD 0.8

1649 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1649 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STL12P6F6
STMicroelectronics

1 : USD 0.799
10 : USD 0.791
25 : USD 0.6999
100 : USD 0.4975
250 : USD 0.4875
500 : USD 0.4875
1000 : USD 0.4875

1649 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 16
Multiples : 1

Stock Image

STL12P6F6
STMicroelectronics

16 : USD 0.791
25 : USD 0.6999
100 : USD 0.4975
250 : USD 0.4875

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

STL12P6F6 P-channel 60 V, 0.13 typ., 12 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R I DS DS(on)max D STL12P6F6 60 V 0.16 10 V 12 A Very low on-resistance 1 2 Very low gate charge 3 4 High avalanche ruggedness Low gate drive power loss PowerFLAT 5x6 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low R in all DS(on) packages. * 6 0 Y Table 1. Device summary Order code Marking Package Packaging STL12P6F6 12P6F6 PowerFLAT 5x6 Tape and reel Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. July 2014 DocID024400 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STL12P6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID024400 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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