Product Information

STP11NM60ND

STP11NM60ND electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 6.3A; 90W; TO220-3
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.613 ea
Line Total: USD 2.61

26 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
26 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STP11NM60ND
STMicroelectronics

1 : USD 2.613
3 : USD 2.366
9 : USD 1.807
25 : USD 1.716

446 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 6
Multiples : 1

Stock Image

STP11NM60ND
STMicroelectronics

6 : USD 2.2612
10 : USD 2.2377
100 : USD 2.1958
500 : USD 2.1008
1000 : USD 2.0588

Read More Specifications

     
Manufacturer
Product Category
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFET 2 I PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes V ( T )R max I DSS jmax DS(on) D 3 3 STD11NM60ND 10 A 1 2 1 (1) STF11NM60ND 10 A DPAK IPAK STI11NM60ND 650 V < 0.45 10 A 3 2 STP11NM60ND 10 A 1 STU11NM60ND 10 A IPAK 1. Limited only by maximum temperature allowed 3 3 2 2 The worldwide best R * area amongst the 1 1 DS(on) fast recovery diode devices TO-220FP TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. Internal schematic diagram Application Switching applications Description The device is an N-channel FDmesh II Power MOSFET that belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company s strip layout and associates all advantages of reduced on- 3 resistance and fast switching with an intrinsic fast- recovery body diode.It is therefore strongly - V recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STD11NM60ND DPAK Tape and reel STF11NM60ND TO-220FP Tube 2 STI11NM60ND 11NM60ND I PAK Tube STP11NM60ND TO-220 Tube STU11NM60ND IPAK Tube October 2010 Doc ID 14625 Rev 2 1/19 www.st.com 19Contents STD/F/I/P/U11NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuits . 10 4 Package mechanical data 11 5 Packaging mechanical data 17 6 Revision history . 18 2/19 Doc ID 14625 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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