Product Information

STP120NF10

STP120NF10 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; TO220-3
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 1.6864 ea
Line Total: USD 8.43

8699 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
723 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STP120NF10
STMicroelectronics

1 : USD 5.577
3 : USD 4.888
9 : USD 2.028
23 : USD 1.911

8699 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1

Stock Image

STP120NF10
STMicroelectronics

5 : USD 1.6864
25 : USD 1.6781
100 : USD 1.6445

Read More Specifications

     
Manufacturer
Product Category
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
Category
Brand Category
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Additional Infomation About Product

STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 m typ., 110 A STripFET II Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data TAB Features Order code V R max. I DS DS(on) D STB120NF10T4 STP120NF10 100 V 10.5 m 110 A 2 D PAK TAB STW120NF10 Exceptional dv/dt capability 100% avalanche tested 3 Low gate charge 3 2 TO-220 2 TO-247 1 1 Applications Figure 1: Internal schematic diagram Switching applications Description D(2, TAB) These Power MOSFETs have been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as G(1) primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. S(3) AM01475v1 noZen Table 1: Device summary Order code Marking Package Packing 2 STB120NF10T4 B120NF10 D PAK Tape and reel STP120NF10 P120NF10 TO-220 Tube STW120NF10 120NF10 TO-247 November 2017 DocID9522 Rev 8 1/19 www.st.com This is information on a product in full production. Contents STB120NF10T4, STP120NF10, STW120NF10 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A2 package information ................................. 9 4.2 DPAK packing information ............................................................. 12 4.3 TO-220 package information ........................................................... 14 4.4 TO-247 package information ........................................................... 16 5 Revision history ............................................................................ 18 2/19 DocID9522 Rev 8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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