Product Information

STP11NM65N

STP11NM65N electronic component of STMicroelectronics

Datasheet
N-Channel 650 V 11A (Tc) 110W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

150: USD 0.8118 ea
Line Total: USD 121.77

970 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 150  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
970 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 150
Multiples : 1

Stock Image

STP11NM65N
STMicroelectronics

150 : USD 0.8118

705 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4
Multiples : 1

Stock Image

STP11NM65N
STMicroelectronics

4 : USD 2.1289

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Additional Infomation About Product

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packages Datasheet - production data Features TAB V R DSS DS(on) 3 Order codes I D 1 T max Jmax 3 DPAK 2 1 STD11NM65N STF11NM65N TO-220FP 710 V < 0.455 11 A STFI11NM65N TAB STP11NM65N 100% avalanche tested 3 1 2 2 3 1 Low input capacitance and gate charge IPAKFP TO-220 low gate input resistance Figure 1. Internal schematic diagram Applications Switching applications % 7 Description These devices are N-channel Power MOSFETs developed using the second generation of * MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is 6 therefore suitable for the most demanding high efficiency converters. 0 Y Table 1. Device summary Order codes Marking Packages Packaging STD11NM65N DPAK Tape and reel STF11NM65N TO-220FP 11NM65N STFI11NM65N IPAKFP Tube STP11NM65N TO-220 July 2013 Doc ID 13476 Rev 4 1/21 This is information on a product in full production. www.st.comContents STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 13476 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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