Product Information

STP13N80K5

STP13N80K5 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; TO220-3

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 2.6988 ea
Line Total: USD 10.8

4355 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
4355 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STP13N80K5
STMicroelectronics

1 : USD 2.6403
10 : USD 2.6273
25 : USD 2.4037
100 : USD 2.1658
250 : USD 2.1225
500 : USD 2.1225
1000 : USD 2.1225

6 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STP13N80K5
STMicroelectronics

1 : USD 5.772
10 : USD 5.395
25 : USD 5.031
50 : USD 4.667
100 : USD 4.069

29 - WHS 3


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STP13N80K5
STMicroelectronics

1 : USD 5.4799
10 : USD 4.7972
30 : USD 4.2333
100 : USD 3.8225
500 : USD 3.6331
1000 : USD 3.5486

4355 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4
Multiples : 1

Stock Image

STP13N80K5
STMicroelectronics

4 : USD 2.6988
10 : USD 2.6598
25 : USD 2.431
100 : USD 2.1671
250 : USD 2.1658
500 : USD 2.1225

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
LoadingGif

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STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 N-channel 800 V, 0.37 typ., 12 A MDmesh K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 Datasheet - production data Features TAB Order code V R max. I P DS DS(on) D TOT STB13N80K5 190 W 3 2 D PAK 2 35 W STF13N80K5 1 800 V 0.45 12 A TO-220FP STP13N80K5 TAB 190 W STW13N80K5 Industrys lowest R x area DS(on) 3 3 Industrys best FoM (figure of merit) 2 TO-220 2 TO-247 1 1 Ultra-low gate charge 100% avalanche tested Figure 1: Internal schematic diagram Zener-protected Applications Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STB13N80K5 DPAK Tape and reel STF13N80K5 TO-220FP 13N80K5 STP13N80K5 TO-220 Tube STW13N80K5 TO-247 September 2017 DocID024348 Rev 4 1/23 www.st.com This is information on a product in full production. Contents STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 DPAK (TO-263) type A package information ................................. 11 4.2 TO-220FP package information ...................................................... 14 4.3 TO-220 type A packing information ................................................. 16 4.4 TO-247 package information ........................................................... 18 4.5 DPAK type A packing information .................................................. 20 5 Revision history ............................................................................ 22 2/23 DocID024348 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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