Product Information

STP140N6F7

STP140N6F7 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3164 ea
Line Total: USD 0.32

72 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
72 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STP140N6F7
STMicroelectronics

1 : USD 0.3164

194 - WHS 2


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STP140N6F7
STMicroelectronics

1 : USD 3.1819
10 : USD 2.7978
50 : USD 2.5574
100 : USD 2.3111
500 : USD 2.1989
1200 : USD 2.1515

24 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STP140N6F7
STMicroelectronics

1 : USD 2.613
3 : USD 2.379
9 : USD 1.924
24 : USD 1.82
250 : USD 1.755

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
LoadingGif

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Additional Infomation About Product

STP140N6F7 N-channel 60 V, 0.0031 typ., 80 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP140N6F7 60 V 0.0035 80 A 158 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STP140N6F7 140N6F7 TO-220 Tube May 2015 DocID027726 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STP140N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 TO-220 type A package information .................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID027726 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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