STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages Datasheet production data Features TAB Order codes V T R max I DS Jmax DS(on) D 3 1 3 STD13NM60ND 2 1 DPAK STF13NM60ND 650 V 0.38 11 A TO-220FP STP13NM60ND TAB The worldwide best R * area among fast DS(on) recovery diode devices 3 2 100% avalanche tested 1 TO-220 Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche Figure 1. Internal schematic diagram capabilities % 7 Applications Switching applications Description * These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh 6 technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior 0 Y switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STD13NM60ND DPAK Tape and reel STF13NM60ND 13NM60ND TO-220FP Tube STP13NM60ND TO-220 May 2013 DocID024645 Rev 1 1/21 This is information on a product in full production. www.st.com 21Contents STD13NM60ND, STF13NM60ND, STP13NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID024645 Rev 1