Product Information

DF5A6.8CFU(TE85L,F

Hot DF5A6.8CFU(TE85L,F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Low Capacitance Protection Diode

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1383 ea
Line Total: USD 0.69

2910 - Global Stock
Ships to you between
Thu. 23 May to Tue. 28 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
46 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 0.0589
10 : USD 0.0578
100 : USD 0.0578
1000 : USD 0.0578

2910 - WHS 2


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 5
Multiples : 5
5 : USD 0.1383
50 : USD 0.0952
150 : USD 0.0699
500 : USD 0.0605
3000 : USD 0.0563
6000 : USD 0.0537

7418 - WHS 3


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.4278
10 : USD 0.299
100 : USD 0.1346
1000 : USD 0.1012
3000 : USD 0.084
9000 : USD 0.0748
24000 : USD 0.0725
45000 : USD 0.0655
99000 : USD 0.0644

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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DF5A6.8CFU TOSHIBA Diodes for Protecting against ESD DF5A6.8CFU Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. z Low Terminal capacitance (between Cathode and Anode) : C =23 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1.CATHODE 1 2. ANODE Power dissipation P 200 mW 3.CATHODE2 4.CATHODE3 Junction temperature T 150 C j 5.CATHODE4 Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 1-2V1B reliability significantly even if the operating conditions (i.e. Weight: 0.0062 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 25 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 23 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 25 kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-06 1 2014-03-01 DF5A6.8CFU Marking Equivalent Circuit (Top View) CW CT - VR IZ - VZ 100 100 10 1 10 0 0.1 0 0.01 1 0.001 0 01 2 345 678 012 3 4567 89 10 VR REVERSE VOLTAGE VR (V) VZ ZENER VOLTAGE VZ (V) 2 2014-03-01 ZENER CURRENT IZ (mA) IZ(mA) TOTAL CAPACITANCE CT (pF) CTpF)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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