X-On Electronics has gained recognition as a prominent supplier of GT30J121(Q) IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. GT30J121(Q) IGBT Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

GT30J121(Q) Toshiba

GT30J121(Q) electronic component of Toshiba
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Part No.GT30J121(Q)
Manufacturer: Toshiba
Category: IGBT Transistors
Description: IGBT Transistors 600V/30A DIS
Datasheet: GT30J121(Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.45 ea
Line Total: USD 3.45 
Availability - 123
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
123
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 3.45
10 : USD 2.484
20 : USD 2.2425
50 : USD 2.185
100 : USD 1.909
200 : USD 1.817
500 : USD 1.748

42
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 4.536
3 : USD 4.088
6 : USD 3.15
16 : USD 2.968

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Package / Case
Technology
Mounting Style
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Height
Length
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GT30J121(Q) from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT30J121(Q) and other electronic components in the IGBT Transistors category and beyond.

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GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: t = 0.05 s (typ.) f Low switching loss : E = 1.00 mJ (typ.) on : E = 0.80 mJ (typ.) off Low saturation voltage: V = 2.0 V (typ.) CE (sat) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage V 600 V CES Gate-emitter voltage V 20 V GES DC I 30 C JEDEC Collector current A 1 ms I 60 CP JEITA Collector power dissipation P 170 W C TOSHIBA 2-16C1C (Tc = 25C) Junction temperature T 150 C Weight: 4.6 g (typ.) j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance R 0.735 C/W th (j-c) Marking TOSHIBA GT30J121 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT30J121 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 20 V, V = 0 500 nA GES GE CE Collector cut-off current I V = 600 V, V = 0 1.0 mA CES CE GE Gate-emitter cut-off voltage V I = 3 mA, V = 5 V 3.5 6.5 V GE (OFF) C CE Collector-emitter saturation voltage V I = 30 A, V = 15 V 2.0 2.45 V CE (sat) C GE Input capacitance C V = 10 V, V = 0, f = 1 MHz 4650 pF ies CE GE Turn-on delay time t 0.09 d (on) Rise time t 0.07 r Turn-on time t 0.24 on Inductive Load Switching time s Turn-off delay time t V = 300 V, I = 30 A 0.30 d (off) CC C V = +15 V, R = 24 GG G Fall time t 0.05 f (Note 1) Turn-off time t 0.43 off (Note 2) Turn-on switching E 1.00 on loss Switching loss mJ Turn-off switching E 0.80 off loss Note 1: Switching time measurement circuit and input/output waveforms V GE 90% GT30J324 10% 0 V GE I C L I V C CC 90% 90% R G V 10% 10% 10% 10% V CE CE 0 t t d (off) d (on) t f t r t t off on Note 2: Switching loss measurement waveforms V GE 90% 10% 0 I C V 5% CE 0 E E off on 2 2006-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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