HN2S02FU(TE85L,F) Toshiba

HN2S02FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU Unit: mm High Speed Switching Application z HN2S02FU is composed of 3 independent diodes. z Low forward voltage: V = 0.54V (typ.) F (3) z Low reverse current: I = 5A (max.) R Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 200 ** mW Junction temperature T 125 C j JEDEC Storage temperature range T 55 to 125 C stg JEITA Operating temperature range T 40 to 100 C TOSHIBA 1-2T1C opr Weight: 6.2 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * :This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one. ** :Total rating Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0, f = 1MH 18 pF T R z Start of commercial production 2000-01 1 2014-03-01 HN2S02FU Pin Assignment (Top View) Marking A9 2 2014-03-01