SI2300 TuoFeng

SI2300 electronic component of TuoFeng
SI2300 TuoFeng
SI2300 MOSFETs
SI2300  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2300 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2300 MOSFETs are a product manufactured by TuoFeng. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2300
Manufacturer: TuoFeng
Category: MOSFETs
Description: MOSFET SOT23 RoHS
Datasheet:
Price (USD)
50: USD 0.0159 ea
Line Total: USD 0.8 
Availability : 0
  
QtyUnit Price
50$ 0.0159
500$ 0.0134
1500$ 0.012
4000$ 0.0107
24000$ 0.01
48000$ 0.0098

Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 50
Multiples : 1
QtyUnit Price
50$ 0.0159
500$ 0.0134
1500$ 0.012
4000$ 0.0107
24000$ 0.01
48000$ 0.0098

   
Manufacturer
Product Category
Category
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We are delighted to provide the SI2300 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2300 and other electronic components in the MOSFETs category and beyond.

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The SI2300 is a MOSFET SOT23 RoHS device from TuoFeng that is designed to provide reliable and high-performance power switching operations. It features a maximum drain-source voltage of 30V, a continuous drain current of 1.2A, a gate threshold voltage of 1.2V, and a maximum total power dissipation of 1.1W. It is optimized for low on-resistance and low gate charge, making it an ideal solution for cost-sensitive, compact designs. The integrated enhancement-mode MOSFET is RoHS compliant for enhanced environmental friendliness.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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