PE632BA U-NIK

PE632BA electronic component of U-NIK
PE632BA U-NIK
PE632BA MOSFETs
PE632BA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PE632BA MOSFETs across the USA, India, Europe, Australia, and various other global locations. PE632BA MOSFETs are a product manufactured by U-NIK. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PE632BA
Manufacturer: U-NIK
Category: MOSFETs
Description: MOSFET N Trench 30V 53A (Tc) 2.3V @ 250uA 4.5 mΩ @ 15A,10V PDFN-8_3x3mm RoHS
Datasheet:
Price (USD)
1: USD 0.3688 ea
Line Total: USD 0.37 
Availability : 0
  
QtyUnit Price
1$ 0.3688
10$ 0.2798
30$ 0.2637
100$ 0.2473
500$ 0.24
1000$ 0.2365
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PE632BA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PE632BA and other electronic components in the MOSFETs category and beyond.

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OThe PE632BA MOSFET N Trench 30V 53A (Tc) 2.3V @ 250uA 4.5 mΩ @ 15A, 10V PDFN-8_3x3mm RoHS is a MOSFET transistor manufactured by U-NIKO. It is an N-channel Trench MOSFET which has a drain-source voltage of 30V, a continuous drain current of 53A (Tc) and a drain-source on state resistance of 4.5 mΩ @ 15A, 10V. It has a Gate-source voltage of 2.3V @ 250uA and has a Ultra small 1.2 x 2.5 x 0.8 mm FB­DFN (3x3mm) package. This component is RoHS compliant and is suitable for use in portable and low power electronics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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