TMD1N60B UNIGROUP

TMD1N60B electronic component of UNIGROUP
TMD1N60B UNIGROUP
TMD1N60B MOSFETs
TMD1N60B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TMD1N60B MOSFETs across the USA, India, Europe, Australia, and various other global locations. TMD1N60B MOSFETs are a product manufactured by UNIGROUP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TMD1N60B
Manufacturer: UNIGROUP
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet:
Price (USD)
5: USD 0.0905 ea
Line Total: USD 0.45 
Availability : 0
  
QtyUnit Price
5$ 0.0905
50$ 0.0885
150$ 0.0871
500$ 0.0859

Availability 0
Ship by Mon. 15 Sep to Thu. 18 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.0905
50$ 0.0885
150$ 0.0871
500$ 0.0859

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TMD1N60B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TMD1N60B and other electronic components in the MOSFETs category and beyond.

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The TMD1N60B is a TO-252 MOSFET manufactured by UNIGROUP that meets the Restrictions of Hazardous Substance (RoHS) guidelines. It is an N-channel MOSFET that is designed for power switching applications. It has a maximum continuous drain to source current of 14 A and a maximum drain to source voltage of 60 V. It also has a maximum channel-on-resistance of 0.006 O. The TMD1N60B also features an Si-gate structure for fast switching and high scalability. It is designed with minimal internal losses and a low gate threshold voltage.This MOSFET is optimal for applications such as DC to DC converters, audio amplifiers, motor drives, and lighting controllers.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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