TTJ12P03AT UNIGROUP

TTJ12P03AT electronic component of UNIGROUP
TTJ12P03AT UNIGROUP
TTJ12P03AT MOSFETs
TTJ12P03AT  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TTJ12P03AT MOSFETs across the USA, India, Europe, Australia, and various other global locations. TTJ12P03AT MOSFETs are a product manufactured by UNIGROUP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TTJ12P03AT
Manufacturer: UNIGROUP
Category: MOSFETs
Description: MOSFET SOP-8 RoHS
Datasheet:
Price (USD)
5: USD 0.1525 ea
Line Total: USD 0.76 
Availability : 0
  
QtyUnit Price
5$ 0.1525
50$ 0.1263
150$ 0.1072
500$ 0.0915
2500$ 0.0888
5000$ 0.0875

Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1525
50$ 0.1263
150$ 0.1072
500$ 0.0915
2500$ 0.0888
5000$ 0.0875

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TTJ12P03AT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TTJ12P03AT and other electronic components in the MOSFETs category and beyond.

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TTJ12P03AT is a MOSFET SOP-8 RoHS (Restriction of Hazardous Substances) manufactured by UNIGROUP. It is a P-channel enhancement-mode MOSFET transistor that is capable of switching loads at high speeds with elevated drain source voltage and low gate threshold voltage. The design of the transistor allows for low on-resistance, low gate charge, high speed switching, and low thermal resistance. The drain-source breakdown voltage is rated at -12V for this transistor, and the gate-source voltage is rated at -4V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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