IPP048N04NG VBsemi Elec

IPP048N04NG electronic component of VBsemi Elec
IPP048N04NG VBsemi Elec
IPP048N04NG MOSFETs
IPP048N04NG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPP048N04NG MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP048N04NG MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPP048N04NG
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: TO-220AB MOSFETs ROHS
Datasheet: IPP048N04NG Datasheet (PDF)
Price (USD)
1: USD 1.521 ea
Line Total: USD 1.52 
Availability : 184
  
Ship by Mon. 27 Oct to Fri. 31 Oct
QtyUnit Price
1$ 1.521
10$ 1.2438
50$ 0.6766
100$ 0.5848
500$ 0.5299
1000$ 0.5006

Availability 184
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.521
10$ 1.2438
50$ 0.6766
100$ 0.5848
500$ 0.5299
1000$ 0.5006

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPP048N04NG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP048N04NG and other electronic components in the MOSFETs category and beyond.

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.The VBsemi Elec IPP048N04NG with TO-220AB MOSFETs ROHS is a highly reliable, low-resistance, power MOSFET that is compliant with RoHS standards. It features a breakdown voltage of 400V, a drain current of 48A, a maximum junction temperature of 175°C, and a typical gate threshold voltage of 3V. It is designed to operate in temperatures between -55°C and +175°C, and both the source and drain are specified for a maximum peak reverse avalanche energy of 100mJ. The package is suited for use in power supplies, power converters, and power amplifiers.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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