WMJ38N60FD Wayon

WMJ38N60FD electronic component of Wayon
WMJ38N60FD Wayon
WMJ38N60FD MOSFETs
WMJ38N60FD  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of WMJ38N60FD MOSFETs across the USA, India, Europe, Australia, and various other global locations. WMJ38N60FD MOSFETs are a product manufactured by Wayon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. WMJ38N60FD
Manufacturer: Wayon
Category: MOSFETs
Description: Transistor: N-MOSFET; SJ-MOSFET FD; unipolar; 600V; 38A; 277W
Datasheet:
Price (USD)
1: USD 5.404 ea
Line Total: USD 5.4 
Availability : 0
  
QtyUnit Price
1$ 5.404
5$ 3.542
13$ 3.346

Availability 0
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.404
5$ 3.542
13$ 3.346

   
Manufacturer
Product Category
Technology
Case
Polarisation
Mounting
Kind Of Package
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the WMJ38N60FD from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the WMJ38N60FD and other electronic components in the MOSFETs category and beyond.

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The Wayon WMJ38N60FD is a two-terminal unipolar N-MOSFET SJ-MOSFET FD transistor with a maximum drain-source voltage rating of 600V, maximum drain current of 38A, and maximum power dissipation of 277W. This transistor engineered by Wayon is designed for use in a variety of power management applications in automated systems. It has a fast switching speed and a high breakdown voltage to reduce power loss and enhance overall system reliability. The device also features high input impedance, low on-Resistance, and low gate charge, making it suitable for synchronous rectification and high speed switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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