Product Information

GT20J341,S4X(S

Name: GT20J341,S4X(S
Brand: Toshiba
SKU: GT20J341S4XS_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

GT20J341,S4X(S electronic component of Toshiba

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See Product Specifications
Datasheet

Transistor: IGBT; 600V; 11A; 45W; TO220FP

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.5535 ea
Line Total: USD 2.55

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1 Multiples : 1 GT20J341,S4X(S Toshiba	1 : USD 2.87 3 : USD 2.576 9 : USD 1.876 24 : USD 1.778

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Additional Infomation About Product

GT20J341 Toshiba GT20J341 is a high speed double insulated IGBT module. It features a short-circuit ruggedness and high-speed switching, and is rated for a maximum collector current of 56A. It can operate at temperatures up to 175°C and has a drain-source breakdown voltage of 2500V. It is part of the GT20J series of IGBTs from Toshiba.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category IGBT Transistors IGBT Transistors
Power Dissipation 45 W 45 W
Mounting Tht Tht
Case To220fp To220fp
Kind Of Package TUBE TUBE
Type Of Transistor Igbt Igbt
Pulsed Collector Current 80 A 80 A
Turn-On Time 200 ns 200 ns
Turn-Off Time 370 ns 370 ns
Collector-Emitter Voltage 600 V 600 V
Collector Current 11 A 11 A
Gate-Emitter Voltage 25 V 25 V