Product Information

WNM2030-3/TR

WNM2030-3/TR electronic component of Will Semiconductor

Datasheet
MOSFET N Trench 20V 880mA 1V @ 250uA 310 mΩ @ 550mA,4.5V SOT-723 RoHS
Manufacturer: Will Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0677 ea
Line Total: USD 0.68

8856 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
11329 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 20
Multiples : 20

Stock Image

WNM2030-3/TR
Will Semiconductor

20 : USD 0.064
200 : USD 0.0527
600 : USD 0.0444
2000 : USD 0.0375
10000 : USD 0.0365
20000 : USD 0.0358

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The WNM2030-3/TR is a Surface Mounted Device (SMD) power MOSFET manufactured by Will Semiconductor. This MOSFET has a N-Channel Trench structure and is capable of operating at up to 20 volts. It has a maximum current rating of 880 mA, a gate-source threshold voltage of 1V, a drain-source on resistance of 310 mO when the current is 550 mA, and a gate-source clamping voltage of 4.5V. It is packaged in a SOT-723 package that is compliant with RoHS regulations.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Will Semiconductor may also be referenced as

Will Semicon
Will Semiconductor
WILLSEMI(Will Semicon)

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