Best SiC MOSFETs in USA, Australia & India.

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NTH4L020N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 203
Ship by Fri. 14 Nov to Thu. 20 Nov

November 2025

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48	23	24	25	26	27	28	29
49	30	1	2	3	4	5	6

USD 7.2657

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

102 A

28 mOhms

- 15 V , + 25 V

4.3 V

220 nC

- 55 C

+ 175 C

510 W

Enhancement

EliteSiC

IXSJ80N120R1K

SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0

USD 22.583

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

85 A

23.4 mOhms

21 V

4.8 V

155 nC

- 40 C

+ 150 C

223.2 W

Enhancement

SCTWA50N120

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 22.7875

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

65 A

52 mOhms

- 10 V , + 25 V

1.8 V

122 nC

- 55 C

+ 200 C

318 W

Enhancement

HiP247

NVBG040N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L SiC MOSFET 1200 V 40 mohm M3S Series in D2PAK-7LD package

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 22.8195

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

49 A

40.5 mOhms

- 8 V , + 22 V

3.22 V

74.5 nC

- 55 C

+ 175 C

297 W

Enhancement

EliteSiC

SCTL35N65G2V

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 22.8664

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

40 A

67 mOhms

- 10 V , + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

NVHL040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 23.2496

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

NVHL080N120SC1A

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 23.5466

Multiples of: 30

Through Hole

N - Channel

1 Channel

1.2 kV

31 A

110 mOhms

- 15 V , + 25 V

4.3 V

56 nC

- 55 C

+ 175 C

178 W

Enhancement

AEC - Q101

EliteSiC

SP90N120CTK

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup

Availability : 0

USD 24.4077

Multiples of: 1

SCT2080KEHRC11

SiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

Availability : 0

USD 24.6166

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

40 A

80 mOhms

- 6 V , + 22 V

1.6 V

106 nC

- 55 C

+ 175 C

262 W

Enhancement

AEC - Q101

NTH4L022N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 25.3091

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

68 A

30 mOhms

- 10 V , + 22 V

4.4 V

151 nC

- 55 C

+ 175 C

352 W

Enhancement

EliteSiC

NVHL060N090SC1

SiC MOSFETs 60MOHM

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 25.5287

Multiples of: 450

Through Hole

N - Channel

1 Channel

900 V

46 A

84 mOhms

- 8 V , + 22 V

4.3 V

87 nC

- 55 C

+ 175 C

221 W

Enhancement

AEC - Q101

EliteSiC

NVHL020N090SC1

SiC MOSFETs 20MOHM 900V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 26.3461

Multiples of: 1

Through Hole

N - Channel

1 Channel

900 V

118 A

28 mOhms

- 8 V , + 22 V

4.3 V

196 nC

- 55 C

+ 175 C

503 W

Enhancement

AEC - Q101

EliteSiC

NTBG020N090SC1

SiC MOSFETs SIC MOS 20MOHM 900V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 26.676

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

900 V

112 A

28 mOhms

- 8 V , + 22 V

4.3 V

200 nC

- 55 C

+ 175 C

477 W

Enhancement

EliteSiC

SCTW40N120G2VAG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 28.5828

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V , + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC - Q101

SCTWA70N120G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 29.2874

Multiples of: 1

SCTW100N65G2AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 30.1693

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

100 A

69 mOhms

- 10 V , + 22 V

5 V

162 nC

- 55 C

+ 200 C

420 W

Enhancement

AEC - Q101

NVBG045N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 30.5429

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

62 A

50 mOhms

- 8 V , + 22 V

4.3 V

105 nC

- 55 C

+ 175 C

242 W

Enhancement

EliteSiC

IV1Q07015T4G

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

Availability : 0

USD 34.8061

Multiples of: 1

NVBG020N090SC1

SiC MOSFETs 20MOHM 900V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 35.0066

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

900 V

112 A

28 mOhms

- 8 V , + 22 V

4.3 V

200 nC

- 55 C

+ 175 C

477 W

Enhancement

AEC - Q101

EliteSiC

SCTWA35N65G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 35.2699

Multiples of: 1