Best SiC MOSFETs in USA, Australia & India.

Select	Filter Name
	Manufacturer
	Mounting Style
	Package/Case
	Transistor Polarity
	Number of Channels
	Vds - Drain-Source Breakdown Voltage
	Id - Continuous Drain Current
	Rds On - Drain-Source Resistance
	Vgs - Gate-Source Voltage
	Vgs th - Gate-Source Threshold Voltage
	Qg - Gate Charge
	Minimum Operating Temperature
	Maximum Operating Temperature
	Pd - Power Dissipation
	Channel Mode
	Qualification
	Tradename

Sorting

Sort Column:

Sort Direction:

Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

SCT3022ALHRC11

SiC MOSFETs 650V 93A 339W SIC 22mOhm TO-247N

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

Availability : 116
Ship by Fri. 14 Nov to Thu. 20 Nov

November 2025

November 2025
	S	M	T	W	T	F	S
44	26	27	28	29	30	31	1
45	2	3	4	5	6	7	8
46	9	10	11	12	13	14	15
47	16	17	18	19	20	21	22
48	23	24	25	26	27	28	29
49	30	1	2	3	4	5	6

USD 52.375

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

93 A

22 mOhms

- 4 V , + 22 V

2.7 V

133 nC

- 55 C

+ 175 C

339 W

Enhancement

AEC - Q101

MSC400SMA330B4

SiC MOSFETs MOSFET SIC 3300 V 400 mOhm TO-247-4

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

Availability : 0

USD 36.275

Multiples of: 1

Through Hole

N - Channel

1 Channel

3.3 kV

11 A

400 mOhms

- 10 V , + 23 V

2.97 V

37 nC

- 55 C

+ 150 C

131 W

Enhancement

IMW120R007M1HXKSA1

SiC MOSFETs Y

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

Availability : 0

USD 37.972

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

225 A

9.9 mOhms

- 5 V , + 20 V

5.2 V

220 nC

- 55 C

+ 175 C

750 W

Enhancement

SCTH100N65G2-7AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ 95 A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 38.1936

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

95 A

26 mOhms

- 10 V , + 22 V

1.9 V

162 nC

- 55 C

+ 175 C

360 W

Enhancement

AEC - Q101

NTBG020N120SC1

SiC MOSFETs SIC MOS 20MW 1200V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 38.2145

Multiples of: 800

SMD/SMT

N - Channel

1 Channel

1.2 kV

98 A

28 mOhms

- 15 V , + 25 V

4.3 V

220 nC

- 55 C

+ 175 C

468 W

Enhancement

EliteSiC

SCTWA90N65G2V-4

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ 119 A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 39.5354

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

119 A

24 mOhms

- 10 V , + 22 V

5 V

157 nC

- 55 C

+ 200 C

565 W

Enhancement

NVHL020N120SC1

SiC MOSFETs 20MW 1200V

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 40.4616

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

103 A

28 mOhms

- 15 V , + 25 V

4.3 V

203 nC

- 55 C

+ 175 C

535 W

Enhancement

AEC - Q101

EliteSiC

NVHL080N120SC1

SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 43.8266

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

31 A

110 mOhms

- 15 V , + 25 V

4.3 V

56 nC

- 55 C

+ 175 C

178 W

Enhancement

AEC - Q101

EliteSiC

SCTW60N120G2

HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 46.5033

Multiples of: 1

SCTW70N120G2V

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ 91 A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 46.6932

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

91 A

21 mOhms

- 10 V , + 22 V

4.9 V

150 nC

- 55 C

+ 200 C

547 W

Enhancement

NVBG020N120SC1

SiC MOSFETs SIC MOS D2PAK-7L 20MOHM 1

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 53.2124

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

98 A

28 mOhms

- 15 V , + 25 V

4.3 V

220 nC

- 55 C

+ 175 C

468 W

Enhancement

AEC - Q101

EliteSiC

SCTWA90N65G2V

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0

USD 59.4919

Multiples of: 1

NVH4L022N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 65.5446

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

68 A

30 mOhms

- 10 V , + 22 V

4.4 V

151 nC

- 55 C

+ 175 C

352 W

Enhancement

EliteSiC

HC1M15120S

SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

Availability : 0

USD 71.8424

Multiples of: 1

NVBG015N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12mohm, 650V, M2, D2PAK-7L Silicon Carbide MOSFET, N-Channel, 650V, 12 mohm, D2PAK-7L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 72.6129

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

145 A

18 mOhms

- 8 V , + 22 V

4.3 V

283 nC

- 55 C

+ 175 C

500 W

Enhancement

EliteSiC

NVH4L018N075SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 13.5mohm, 750V, M2, TO247-4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 79.1377

Multiples of: 1

EliteSiC

NVH4L020N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0

USD 88.0986

Multiples of: 450

Through Hole

N - Channel

1 Channel

1.2 kV

102 A

28 mOhms

- 15 V , + 25 V

4.3 V

220 nC

- 55 C

+ 175 C

510 W

Enhancement

EliteSiC

HC2M0045170P

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

Availability : 0

USD 98.4822

Multiples of: 1

MSC080SMA330B4

SiC MOSFETs MOSFET SIC 3300 V 80 mOhm TO-247-4

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

Availability : 0

USD 129.7955

Multiples of: 1

IV1B12013HA1L

Silicon Carbide Field Effect Transistor (MOSFET) ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

Availability : 0

USD 174.3641

Multiples of: 1