SCTWA90N65G2V-4 STMicroelectronics

SCTWA90N65G2V-4 Datasheet Silicon carbide Power MOSFET 650 V, 18 m typ., 119 A in an HiP247-4 package Features V R max. I Order code DS DS(on) D SCTWA90N65G2V-4 650 V 24 m 119 A High speed switching performance Very high operating junction temperature capability (T = 200 C) J 4 3 Very fast and robust intrinsic body diode 2 1 Extremely low gate charge and input capacitances HiP247-4 Source sensing pin for increased efficiency Drain(1, TAB) Applications Switching mode power supply DC-DC converters Gate(4) Industrial motor control Driver source(3) Description Power source(2) This silicon carbide Power MOSFET device has been developed using STs ND1TPS2DS3G4 nd advanced and innovative 2 generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA90N65G2V-4 Product summary Order code SCTWA90N65G2V-4 Marking SCT90N65G2V Package HiP247-4 Packing Tube DS13582 - Rev 1 - November 2020 www.st.com For further information contact your local STMicroelectronics sales office.SCTWA90N65G2V-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 650 V DS Gate-source voltage -10 to 22 V V GS Gate-source voltage (recommended operating values) -5 to 18 Drain current (continuous) at T = 25 C 119 C I A D Drain current (continuous) at T = 100 C 90 C (1) I Drain current (pulsed) 220 A DM P Total power dissipation at T = 25 C 565 W TOT C T Storage temperature range C stg -55 to 200 T Operating junction temperature range C j 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 0.31 C/W thJC R Thermal resistance, junction-to-ambient 40 C/W thJA DS13582 - Rev 1 page 2/13