X-On Electronics has gained recognition as a prominent supplier of 2N3906-G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N3906-G Bipolar Transistors - BJT are a product manufactured by Comchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N3906-G Comchip

2N3906-G electronic component of Comchip
2N3906-G Comchip
2N3906-G Bipolar Transistors - BJT
2N3906-G  Semiconductors

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See Product Specifications
Part No. 2N3906-G
Manufacturer: Comchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT -40V -200mA TO-92
Datasheet: 2N3906-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3375 ea
Line Total: USD 0.34 
Availability - 5891
Ship by Mon. 23 Jun to Wed. 25 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5891
Ship by Mon. 23 Jun to Wed. 25 Jun
MOQ : 1
Multiples : 1
1 : USD 0.3375
10 : USD 0.2763
100 : USD 0.0948
1000 : USD 0.0693
2000 : USD 0.0528
10000 : USD 0.0418
25000 : USD 0.0407
50000 : USD 0.0363

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N3906-G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3906-G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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General Purpose Transistor 2N3906-G (PNP) RoHS Device TO-92 Features -PNP silicon epitaxial planar transistor for 0.185(4.70) switching and amplifier application. 0.173(4.40) -As complementary type, the NPN transistor 0.135 (3.43) Min. 0.055 (1.14) 0.020(0.51) 0.043(1. 10) 2N3904-G is recommended. 0.014(0.36) 0.022(0.55) 0.015(0.38) -This transistor is available in the SOT-23 case with the type designation MMBT3906-G. 0.015(0.38) Max. 0.0 63(1. 60) Max. Collector 3 1. Emitter 0.050(1.270)TYP 2. Base 2 0.104(2.64) 0.096(2.44) Base 1 2 3 3. Collector 1 Dimensions in inches and (millimeter) Emitter Maximum Ratings (at TA=25C unless otherwise noted) Parameter Symbol Max Unit Min Collector-Base voltage -40 VCBO V Collector-Emitter voltage VCEO V -40 Emitter-Base voltage VEBO -5 V Collector Current-Continuous IC -0.2 A Collector Dissipation PC 0.625 W O TSTG , TJ Storage Temperature and Junction Temperature +150 -55 C REV:B QW-BTR05 Page 1 0.185(4.70) 0.169(4.30) 0.146(3.70) 0.130(3.30) 0.571(14.50) 0.555 (14.10)General Purpose Transistor Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions Min Max Unit Collector-Base breakdown voltage IC =-10 A , IE=0 V(BR)CBO -40 V Collector-Emitter breakdown voltage IC =-1mA , IB=0 V(BR)CEO -40 V Emitter-Base breakdown voltage IE =-10 A , IC=0 V(BR)EBO -5 V VCB=-40V , IE=0 -0.1 Collector cut-off current ICBO A A Collector cut-off current VCE=-30V , VBE(off)=-3V ICEX -50 VEB=-5V , IC=0 A Emitter cut-off current IEBO -0.1 hFE(1) VCE=-1V , IC=-10mA 100 400 VCE=-1V , IC=-50mA hFE(2) 60 DC current gain VCE=-1V , IC=-100mA hFE(3) 30 Collector-Emitter saturation voltage IC=-50mA , IB=-5mA -0.4 V VCE(sat) VBE(sat) Base-emitter saturation voltage IC=-50mA , IB=-5mA -0.95 V VCE=-20V , IC=-10mA 250 Transition frequency fT MHz f=100MHz Delay time VCC=-3V , VBE=-0.5V td 35 nS Rise time IC=-10mA , IB1=-1mA tr 35 nS Storage time VCC=-3V , IC=-10mA nS ts 225 Fall time IB1=IB2=-1mA tf 75 nS Classification of hFE(1) Rank O Y G Range 100-200 200-300 300-400 REV:B QW-BTR05 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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