X-On Electronics has gained recognition as a prominent supplier of ASS8550-H-HF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ASS8550-H-HF Bipolar Transistors - BJT are a product manufactured by Comchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ASS8550-H-HF Comchip

ASS8550-H-HF electronic component of Comchip
ASS8550-H-HF Comchip
ASS8550-H-HF Bipolar Transistors - BJT
ASS8550-H-HF  Semiconductors

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See Product Specifications
Part No. ASS8550-H-HF
Manufacturer: Comchip
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 300mW Surface Mount SOT-23
Datasheet: ASS8550-H-HF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4125 ea
Line Total: USD 0.41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 25 Jul to Thu. 31 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.1377

0
Ship by Wed. 23 Jul to Fri. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4125
10 : USD 0.285
100 : USD 0.1728
500 : USD 0.099
1000 : USD 0.0748
3000 : USD 0.0605
6000 : USD 0.055
9000 : USD 0.0473
24000 : USD 0.0462

   
Manufacturer
Product Category
Package / Case
Series
Packaging
Part Status
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Vce Saturation Max Ib Ic
Current - Collector Cutoff Max
Dc Current Gain Hfe Min Ic Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Supplier Device Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ASS8550-H-HF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ASS8550-H-HF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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General Purpose Transistors ASS8550-L-HF Thru. ASS8550-H-HF (PNP) RoHS Device Halogen Free Features SOT-23 - Epoxy meets UL-94 V-0 ammability rating. 0.118(3.00) - Moisture sensitivity Level 1. 0.110(2.80) 3 - AEC-Q101 Qualied. 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Mechanical data 0.008(0.20) 0.004(0.10) - Case: SOT-23, molded plastic. 0.004(0.10) 0.100(2.55) 0.000(0.00) 0.089(2.25) - Terminals: Tin plated leads, solderable per 0.041(1.05) J-STD-002 and JESD22-B102. 0.035(0.90) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimensions in inches and (millimeter) Circuit Diagram 1. Base 2. Emitter 3 3. Collector 1 2 Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -1.5 A Total device dissipation PD 300 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR17 Page 1 Comchip Technology CO., LTD.General Purpose Transistors Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Symbol Conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC = -10 0A, IE = 0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC = -100 A, IB = 0 -25 V Emitter-base breakdown voltage IE = -100 A, IC = 0 V(BR)EBO -5 V VCB = -40V, IE = 0 nA Collector cut-o current ICBO -100 Collector cut-o current ICEO VCE = -20V, IB = 0 -100 nA Emitter cut-o current IEBO VEB = -5V, IC = 0 -100 nA hFE(1) VCE = -1V, IC = -100mA 120 350 DC current gain hFE(2) VCE = -1V, IC = -800mA 40 Collector-emitter saturation voltage VCE(sat) IC = -800mA, IB = -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC = -800mA, IB = -80mA -1.2 V Small-signal characteristics Transition frequency VCE = -10Vdc, IC = -50mA, f = 30MHz fT 100 MHz Classication of hFE (1) Rank ASS8550-L-HF ASS8550-H-HF Range 120-200 200-350 Company reserves the right to improve product design , functions and reliability without notice. REV:A AQW-JTR17 Page 2 Comchip Technology CO., LTD.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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