Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM: 0.20W ( TA=25 C) SOT-23 -Collector current ICM: 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO: BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range: TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80) 0.006(0.15) Mechanical data 0.003(0.08) -Case: SOT-23, molded plastic. 0.041(1.05) 0.100(2.55) 0.035(0.90) -Terminals: solderable per MIL-STD-750, 0.089(2.25) method 2026. -Approx. weight: 0.008 grams 0.004(0.10) max 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Circuit diagram -1.BASE Dimensions in inches and (millimeter) -2.EMITTER 3 -3.COLLECTOR 1 2 O Maximum Ratings (at Ta=25 C unless otherwise noted) Symbol Parameter Value UNIT BC846-G 80 Collector-Base Voltage VCBO V BC847-G 50 BC848-G 30 BC846-G 65 Collector-Emitter Voltage VCEO V BC847-G 45 30 BC848-G Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 0.1 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 C Storage Temperature Range TSTG -65 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR31 Page 1 Comchip Technology CO., LTD.Small Signal Transistor Electrical Characteristics (BC846A-G Thru. BC848C-G, TA= 25 C unless otherwise specified) Symbol Parameter Test Conditions MIN TYP MAX UNIT BC846-G 80 Collector-Base Breakdown Voltage IC =10 A , IE=0 BC847-G VCBO 50 V 30 BC848-G BC846-G 65 Collector-Emitter Breakdown Voltage IC =10mA , IB=0 BC847-G VCEO 45 V 30 BC848-G Emitter-Base Break Voltage VEBO IE =10A , IC=0 6 V BC846-G VCB=70V , IE=0 A ICBO VCB=50V , IE=0 0.1 Collector Cut-off Current BC847-G VCB=30V , IE=0 BC848-G VCB=60V , IE=0 BC846-G VCB=45V , IE=0 A Collector Cut-off Current BC847-G ICEO 0.1 VCB=30V , IE=0 BC848-G VEB=5V , IC=0 A Emitter cut-off current IEBO 0.1 BC846A,BC847A,BC848A 110 220 VCE =5V , IC=2mA DC Current Gain hFE BC846B,BC847B,BC848B 200 450 BC847C,BC848C 420 800 Collector-Emitter Saturation Voltage VCE(sat) IC =100mA , IB=5mA 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC =100mA , IB=5mA 1.1 V VCE=5V , IC=10mA Transition Frequency fT 100 MHZ f=100MHZ pF Collector Output Capacitance Cob VCB =10V , f=1MHZ 4.5 REV:B QW-BTR31 Page 2 Comchip Technology CO., LTD.