MOSFET CMS25N03V8-HF N-Channel RoHS Device Halogen Free PDFN3.3x3.3(SPR-PAK) Features - Advanced high cell density trench 0.126(3.20) 0.102(2.59) 0.118(3.00) 0.094(2.39) technology. D D D D 0.020(0.50) - Super low gate charge. 8 7 6 5 0.012(0.30) - Excellent cdv/dt effect decline. 0.136(3.45) 0.066(1.68) 0.126(3.20) 0.058(1.48) - Green device available. 0.126(3.20) 0.006(0.15) 0.118(3.00) - 100% EAS guaranteed. Max. 1 2 3 4 0.020(0.50) 0.012(0.30) S S S G 0.014(0.35) 0.026(0.65) Mechanical data 0.010(0.25) BSC - Case: PDFN3.3x3.3/SPR-PAK standard package, molded plastic. 0.031(0.80) 0.028(0.70) 0.010(0.25) 0.134(3.40) 0.004(0.10) 0.126(3.20) Circuit diagram D - G : Gate Dimensions in inches and (millimeter) - S : Source - D : Drain G S Maximum Ratings Symbol Parameter Conditions Value Unit Drain-source voltage VDS 30 V Gate-source voltage VGS 20 V ID TC = 25C 25 Continuous drain current (Note 1) A ID TC = 100C 16 Pulsed drain current (Note 1, 2) IDM 55 A PD TC = 25C 20 Total power dissipation (Note 4) W PD TA = 25C 1.7 Single pulse avalanche energy, L=0.1mH (Note 3) EAS 22 mJ Single pulse avalanche current, L=0.1mH (Note 3) IAS 21 A Operating junction temperature range TJ -55 to +150 C Storage temperature range TSTG -55 to +150 C Thermal resistance junction-ambient (Note 1) Steady state R JA 75 C/W Thermal resistance junction-case (Note 1) Steady state R JC 6 C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR73 Page 1 Comchip Technology CO., LTD.MOSFET Electrical Characteristics (at TJ=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Drain-source breakdown voltage VGS = 0V, ID = 250A BVDSS 30 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.8 2.5 Gate-source leakage current IGSS VGS = 20V 100 nA Drain-source leakage current (Tj=25C) VDS = 30V, VGS = 0V 1 A IDSS Drain-source leakage current (Tj=55C) VDS = 24V, VGS = 0V 5 VGS = 10V, ID = 10A 15 18 Static drain-source on-resistance (Note 2) RDS(on) m VGS = 4.5V, ID = 5A 21 28 Total gate charge (Note 2) Qg 7.2 Gate-source charge Qgs ID = 10A, VDS = 20V, VGS = 4.5V 1.4 nC Gate-drain (miller) charge Qgd 2.2 Turn-on delay time (Note 2) td(on) 4.1 Rise time tr 9.8 VDS = 12V, VGS = 10V nS ID = 5A, RG = 3.3 Turn-off delay time td(off) 15.5 Fall time tf 6.0 Input capacitance Ciss 572 VGS = 0V, VDS = 15V, f = 1MHZ pF Output capacitance Coss 81 Reverse transfer capacitance Crss 65 Rg Gate resistance f = 1MHZ 2.5 Source-drain diode Diode forward voltage (Note 2) VSD IS = 10A, VGS = 0V, TJ=25C 1.2 V 25 A Continuous source current (Note 1,6) IS VG = VD = 0V, Force current A Pulsed source current (Note 2,6) ISM 50 Guaranteed avalanche characteristics Single pulse avalanche energy (Note 5) EAS VDD = 25V, L=0.1mH, IAS = 10A 5 mJ Notes: 1. The data tested by surface mounted on a 1 inch FR-4 board with 2 oz copper. 2. The data tested by pulsed, pulse width 300s, duty cycle 2%. 3. The EAS data shows max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=21A. 4. The power dissipation is limited by 150C junction temperature. 5. The min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR73 Page 2 Comchip Technology CO., LTD.