General Purpose Transistor MMBTA56-HF (PNP) RoHS Device Halogen Free Features - Power dissipation of 225mW. - High stability and high reliability. SOT-23 1. Base 2. Emitter 0.118(3.00) 3. Collector 0.110(2.80) 3 0.055(1.40) Mechanical data 0.047(1.20) 1 2 - Case: SOT-23, molded plastic. 0.079(2.00) - Epoxy : UL 94V-0. 0.071(1.80) 0.006(0.15) - Mounting position: Any. 0.003(0.08) 0.100(2.55) 0.041(1.05) 0.089(2.25) 0.035(0.90) 0.004(0.10) 0.000(0.00) 0.019(0.50) 0.020(0.50) Circuit Diagram 0.012(0.30) 0.012(0.30) 3 Collector Dimensions in inches and (millimeter) 1 Base 2 Emitter Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -4 V Collector current-continuous IC -500 mA Collector power dissipation PC 225 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Thermal resistance, junction to ambient R JA 555 C/W Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR88 Page 1 Comchip Technology CO., LTD.General Purpose Transistor Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-base breakdown voltage IC = -100 A, IE = 0 V(BR)CBO -80 V Collector-emitter breakdown voltage (Note 1) IC = -1mA, IB = 0 V(BR)CEO -80 V Emitter-base breakdown voltage IE = -100A, IC = 0 V(BR)EBO -4 V Collector cut-o current VCB = -80V, IE = 0 ICBO -100 nA Emitter cut-o current VEB = -4V, IC = 0 IEBO -100 nA Collector cut-o current VCE = -60V, IB = 0 ICEO -1.0 A VCE = -1V, IC = -10mA hFE(1) 100 400 DC current gain (Note 1) VCE = -1V, IC = -100mA hFE(2) 100 Collector-emitter saturation voltage (Note 1) IC = -100mA, IB = -10mA VCE(sat) -0.25 V Base-emitter voltage VCE = -1V, IC = -100mA VBE -1.20 V Transition frequency VCE = -1V, IC = -100mA, f = 100MHz fT 50 MHz Note: 1. Pulse width 300s, duty cycle 2.0%. Rating and Characteristic Curves (MMBTA56-HF) Fig.1 - Static Characteristic Fig.2 - hFE IC -160 1000 Common Common Emitter Emitter -800A VCE = -1V Ta=25C -720A -120 -640A Ta=100C -560A -480A Ta= 25C -80 100 -400A -320A -240A -40 -160A IB= -80A 0 10 -0 -1 -2 -3 -4 -5 -6 -3 -10 -100 -500 Collector Current, Ic (mA) Collector-Emitter Voltage, VCE (V) Fig.3 - VCEsat IC Fig.4 - VBE IC -1000 -100 VCE = -1V -100 -10 Ta=100C TTa= 25Ca= 25C -10 -1 =10 -1 -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -1 -10 -100 -500 Collector Current, Ic (mA) Base-Emitter Voltage, VBE (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JTR88 Page 2 Comchip Technology CO., LTD. Ta=100C Ta=25C Collector-Emitter Saturation Voltage, Collector Current, IC (mA) VCEsat (mV) DC Current Gain, hFE Collector Current, IC (mA)