Product Information

DMG6602SVT

DMG6602SVT electronic component of Diodes Incorporated

Datasheet
MOSFET, NP CH, , 30V, 3.4, ATSOT23
Manufacturer: Diodes Incorporated
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5331 ea
Line Total: USD 2.67

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1

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DMG6602SVT
Diodes Incorporated

5 : USD 0.5331
10 : USD 0.3053
100 : USD 0.1583
500 : USD 0.1333
1000 : USD 0.1084
5000 : USD 0.1017

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Continuous Drain Current Id N Channel
Continuous Drain Current Id P Channel
Drain Source Voltage Vds N Channel
Drain Source Voltage Vds P Channel
Module Configuration
On Resistance Rdson N Channel
On Resistance Rdson P Channel
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device Low Input Capacitance V R (BR)DSS DS(on) T = 25C A Fast Switching Speed Low Input/Output Leakage 60m V = 10V 3.4A GS Q1 30V Totally Lead-Free Finish RoHS compliant (Note 1) 100m V = 4.5V 2.7A GS Halogen and Antimony Free. Green Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability 95m V = -10V -2.8A GS Q2 -30V 140m V = -4.5V -2.3A GS Mechanical Data Case: TSOT26 Description and Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 This new generation MOSFET has been designed to minimize the on- Moisture Sensitivity: Level 1 per J-STD-020 state resistance (R ) and yet maintain superior switching DS(on) Terminals Connections: See Diagram performance, making it ideal for high efficiency power management Terminals: Finish Matte Tin annealed over Copper leadframe. applications. Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.013 grams (approximate) DC-DC Converters Power management functions Q1 Q2 D1 D2 TSOT26 G1 1 6 D1 G1 G2 S2 2 5 S1 G2 3 4 D2 S1 S2 Top View Top View N-Channel P-Channel Ordering Information (Note 3) Part Number Case Packaging DMG6602SVT-7 TSOT26 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at DMG6602SVT Maximum Ratings Q1 TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = 25C 3.4 A Continuous Drain Current (Note 5) V = 10V I A GS D State 2.7 T = 70C A T = 25C 2.7 Steady A Continuous Drain Current (Note 5) V = 4.5V I A GS D State 2.2 T = 70C A Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A Pulsed Drain Current (Note 5) 25 A I DM Maximum Ratings Q2 TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = 25C -2.8 A A Continuous Drain Current (Note 5) V = -10V I GS D State -2.4 T = 70C A Steady T = 25C -2.3 A Continuous Drain Current (Note 5) V = -4.5V I A GS D State -2.1 T = 70C A Maximum Continuous Body Diode Forward Current (Note 5) IS -1.5 A Pulsed Drain Current (Note 5) I -20 A D Thermal Characteristics Characteristic Symbol Value Units T = 25C 0.84 A Total Power Dissipation (Note 4) W P D T = 70C 0.52 A Steady state 155 Thermal Resistance, Junction to Ambient (Note 4) C/W R JA t<10s 109 T = 25C 1.27 A Total Power Dissipation (Note 5) W P D T = 70C 0.8 A Steady state 102 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 71 C/W Thermal Resistance, Junction to Case (Note 5) 34 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 May 2012 DMG6602SVT Diodes Incorporated www.diodes.com Document number: DS35106 Rev. 6 - 2 ADVANCE INFORMATION

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diodes Incorporated may also be referenced as

DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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