TRANSISTOR BU406B MAIN CHARACTERISTICS FEATURES IC 6A Epitaxial silicon VCEO 150V High switching speed PC 65W High current capability RoHS RoHS product APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit Package TO-220 ABSOLUTE RATINGS (Tc=25 ) Parameter Symbol Value Unit VCBO 150 V Collector- Base Voltage IE=0 VCEO 150 V Collector- Emitter Voltage IB=0 VEBO 6 V Emitter-Base Voltage IC=0 IC 6 A Collector Current DC PC 65 W Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature THERMAL CHARACTERISTIC Parameter Symbol (min) (max) Unit Rth(j-c) - 1.92 /W Thermal Resistance Junction Case 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=100uA,IE=0 150 - - V V(BR)CEO IC=10mA,IB=0 150 - - V V(BR)EBO IE=1mA,IC=0 6 - - V ICBO VCB=150V, IE=0 1 A ICEO VCE=100V, IE=0 - - 10 A IEBO VEB=5V, IC=0 - - 1 A Hfe(1) * VCE =10V, IC=1A 60 - 80 VCE(sat) * IC=6A, IB=0.6A - - 1.5 V VBE(sat) * IC=6A, IB=0.5A - - 2 V VCE=10V, Ic=0.5A,f=1MHz f 3 - - MHz T *Pulse Test: PW300ms, Duty Cycle2% PC-TC = atu 2 Ver-1.0