Product Information

BU406B

Product Image X-ON

Datasheet
Transistors (NPN/PNP) TO-220 RoHS

Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3672 ea
Line Total: USD 0.3672

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 16 Jun to Wed. 21 Jun

MOQ : 1
Multiples : 1

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BU406B
FeiHong

1 : USD 0.3672
10 : USD 0.3039
30 : USD 0.2581
100 : USD 0.2202
500 : USD 0.2137
1000 : USD 0.2106

     
Manufacturer
FeiHong
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors-BJT
Rohs
y
Package
TO - 220
Brand Category
Feihong
Collector Cut-Off Current Icbo
1 uA
Collector-Emitter Breakdown Voltage Vceo
150 V
Power Dissipation Pd
65 W
Collector Current Ic
6 A
Dc Current Gain Hfe@Ic Vce
-
Transition Frequency Ft
3MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
1.5 V @6A , 600 mA
Transistor Type
NPN
Operating Temperature
+ 150 C @ (Tj)
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TRANSISTOR BU406B MAIN CHARACTERISTICS FEATURES IC 6A Epitaxial silicon VCEO 150V High switching speed PC 65W High current capability RoHS RoHS product APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit Package TO-220 ABSOLUTE RATINGS (Tc=25 ) Parameter Symbol Value Unit VCBO 150 V Collector- Base Voltage IE=0 VCEO 150 V Collector- Emitter Voltage IB=0 VEBO 6 V Emitter-Base Voltage IC=0 IC 6 A Collector Current DC PC 65 W Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature THERMAL CHARACTERISTIC Parameter Symbol (min) (max) Unit Rth(j-c) - 1.92 /W Thermal Resistance Junction Case 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=100uA,IE=0 150 - - V V(BR)CEO IC=10mA,IB=0 150 - - V V(BR)EBO IE=1mA,IC=0 6 - - V ICBO VCB=150V, IE=0 1 A ICEO VCE=100V, IE=0 - - 10 A IEBO VEB=5V, IC=0 - - 1 A Hfe(1) * VCE =10V, IC=1A 60 - 80 VCE(sat) * IC=6A, IB=0.6A - - 1.5 V VBE(sat) * IC=6A, IB=0.5A - - 2 V VCE=10V, Ic=0.5A,f=1MHz f 3 - - MHz T *Pulse Test: PW300ms, Duty Cycle2% PC-TC = atu 2 Ver-1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,