Product Information

C9013B

Product Image X-ON

Datasheet
Transistors (NPN/PNP) 500mA 20V TO-92 RoHS
Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0375 ea
Line Total: USD 0.75

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between
Mon. 19 Jun to Thu. 22 Jun

MOQ : 20
Multiples : 20

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C9013B
FeiHong

20 : USD 0.0375
200 : USD 0.0311
600 : USD 0.0263
2000 : USD 0.0226
10000 : USD 0.0219
20000 : USD 0.0215

Read More Specifications

     
Manufacturer
FeiHong
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors-BJT
Rohs
y
Package
TO - 92
Brand Category
Feihong
Current - Collector Ic Max
500 mA
Voltage - Collector Emitter Breakdown Max
20 V
Power - Max
625 mW
Collector-Emitter Breakdown Voltage Vceo
20 V
Power Dissipation Pd
625 mW
Collector Current Ic
500 mA
Transistor Type
-
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Additional Infomation About Product

TRANSISTOR C9013B MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 20V High switching speed VCBO 40V C9012 Complementary to C9012 PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform Package TO-92 ABSOLUTE RATINGS (Tc=25 ) Symbol Parameter Value Unit VCBO 40 V Collector- Base Voltage IE=0 VCEO 20 V Collector- Emitter Voltage IB=0 VEBO 5 V Emitter-Base VoltageIC=0 IC 500 mA Collector Current DC PC 625 mW Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=0.1mA IE=0 40 - - V V(BR)CEO IC=1mA,IB=0 20 - V V(BR)EBO IE=0.1mA,IC=0 5 - - V ICBO VCB=25V, IE=0 - - 0.1 A IEBO VEB=3V, IC=0 - - 0.1 A Hfe(1) VCE =1V, IC=50mA 64 - 276 - Hfe(2) VCE =1V, IC=500mA 40 - - - - VCE(sat) IC=500mA, IB=50mA - 0.6 V VBE(sat) IC=500mA, IB=50mA - - 1.2 V hFE Classifications D E F G H I hFE Classifications 64-91 78-112 96-135 112-166 120-202 188-276 hFE Range 2 Ver-1.0

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,