Product Information

C9013-H

Product Image X-ON

Datasheet
Transistors (NPN/PNP) TO-92 RoHS
Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0381 ea
Line Total: USD 0.762

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between
Mon. 19 Jun to Thu. 22 Jun

MOQ : 20
Multiples : 20

Stock Image

C9013-H
FeiHong

20 : USD 0.0381
200 : USD 0.0318
600 : USD 0.027
2000 : USD 0.0231
10000 : USD 0.0226
20000 : USD 0.0221

Read More Specifications

     
Manufacturer
FeiHong
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors-BJT
Rohs
y
Package
TO - 92
Brand Category
Feihong
Collector Cut-Off Current Icbo
-
Collector-Emitter Breakdown Voltage Vceo
-
Power Dissipation Pd
-
Collector Current Ic
-
Dc Current Gain Hfe@Ic Vce
-
Transition Frequency Ft
-
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
-
Transistor Type
-
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Additional Infomation About Product

TRANSISTOR C9013-H MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 20V High switching speed VCBO 40V C9012 Complementary to C9012 PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform Package TO-92 ABSOLUTE RATINGS (Tc=25 ) Symbol Parameter Value Unit VCBO 40 V Collector- Base Voltage IE=0 VCEO 20 V Collector- Emitter Voltage IB=0 VEBO 5 V Emitter-Base VoltageIC=0 IC 500 mA Collector Current DC PC 625 mW Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature A4 1 Ver-1.1LC ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=0.1mA IE=0 40 - - V V(BR)CEO IC=1mA,IB=0 20 - V V(BR)EBO IE=0.1mA,IC=0 5 - - V ICBO VCB=25V, IE=0 - - 0.1 A IEBO VEB=3V, IC=0 - - 0.1 A Hfe(1) VCE =1V, IC=50mA 64 - 276 - Hfe(2) VCE =1V, IC=500mA 40 - - - - VCE(sat) IC=500mA, IB=50mA - 0.6 V VBE(sat) IC=500mA, IB=50mA - - 1.2 V hFE Classifications D E F G H I hFE Classifications 64-91 78-112 96-135 112-166 120-202 188-276 hFE Range A4 2 Ver-1.1LC

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,