N N-CHANNEL MOSFET FHU4N60A/FHP4N60A/FHD4N60A/FHF4N60A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested dv/dt Improved dv/dt capability APPLICATIONS RoHS RoHS product High efficiency switch mode power supplies Equivalent Circuit Electronic ballast LED power supply LED Package TO-220F TO-252 TO-251 TO-220 FHF FHD FHU FHP ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol Unit FHU4N60A FHP4N60A FHD4N60A FHF4N60A VDS 600 V Drain-Source Voltage IDTC=25 4 A * IDTC=100) 2.5 A Drain Current -continuous * 1 IDM 16 A Drain Current pulsenote 1 VGS 30 V Gate-Source Voltage 2 EAS 128 mJ Single Pulsed Avalanche Energynote 2 1 IAR 1.9 A Avalanche Current note 1 1 EAR 4.4 mJ Repetitive Avalanche Current note 1 3 dv/dt 5.0 V/ns Peak Diode Recovery dv/dt note 3 75 75 75 30 W PD TC=25 -Derate above 25 0.6 0.6 0.6 0.24 W/ Power Dissipation TJTSTG 15055 to 150 Operating and Storage Temperature Range Maximum Lead Temperature for TL 300 Soldering Purposes * *Drain current limited by maximum junction temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Min Typ Max Units Off Characteristics Drain-Source BVDSS ID=250A, VGS=0V 600 - - V Voltage Breakdown BVDSS/ TJ ID=250A, referenced to 25 - 0.66 - V/ Voltage Temperature Coefficient VDS=600V,VGS=0V, TC=25 - - 10 A IDSS Zero Gate Voltage Drain VDS=480V, TC=125 - - 100 A Current IGSS F/R VDS=0V, VGS =30V - - 100 A Gate-body leakage current On-Characteristics VGS(th) VDS = VGS , ID=250A 2.0 - 4.0 V Gate Threshold Voltage RDS(ON) VGS =10V , ID=2A - 1.7 2.1 Static Drain-Source On-Resistance gfs VDS = 15V, ID=2Anote 4 - 2.5 - S Forward Transconductance Dynamic Characteristics Ciss - 560 - Input capacitance VDS=25V, Coss VGS =0V, - 45 - pF Output capacitance f=1.0MHz Crss - 17 - Reverse transfer capacitance Switching Characteristics td(on) - 64 - ns Turn-On delay time VDS=300V, tr - 24 - ns ID=4A, Turn-On rise time RG=25 td(off) - 28 - ns VGS =10V Turn-Off delay time note 45 tf - 200 - ns Turn-Off Fall time Qg - 13.3 - nC VDS =480V , Total Gate Charge ID=2A , Qgs - 3.0 - nC VGS =10V Gate-Source charge note 45 Qgd - 4.8 - nC Gate-Drain charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain IS - - 4 A -Source Diode Forward Current Maximum Pulsed ISM - - 16 A Drain-Source Diode Forward Current - VSD VGS=0V, IS=2A - 1.4 V Drain-Source Diode Forward Voltage trr - 390 - ns Reverse recovery time VGS=0V, IS=2A ,dIF/dt=100A/s (note 4) Qrr - 1.85 - uC Reverse recovery charge 2 Ver-1.0