N N-CHANNEL MOSFET FHP60N06B MAIN CHARACTERISTICS FEATURES ID 60 A Low gate charge VDSS 60 V Crss ( 200pF) Low Crss (typical 200pF ) Rdson-typ Vgs=10V 18m Fast switching Qg-typ 27nC 100% 100% avalanche tested dv/dt Improved dv/dt capability APPLICATIONS RoHS RoHS product Power management for inverter systems DC-DC converter and switch DC-DC mode power supplies Package Equivalent Circuit TO-220 FHP series ABSOLUTE RATINGS (Tc=25 ) Value Parameter Symbol Unit FHP60N06B VDS 60 V Drain-Source Voltage IDTC=25 60 A * IDTC=100 ) 42 A Drain Current -continuous * 1 IDM 240 A Drain Current pulsenote 1 VGS 20 V Gate-Source Voltage 2 EAS 1070 mJ Single Pulsed Avalanche Energy note 2 1 IAR 50 A Avalanche Current note 1 1 EAR 12 mJ Repetitive Avalanche Current note 1 3 dv/dt 5.0 V/ns Peak Diode Recovery dv/dt note 3 PD TC=25 120 W -Derate above 25 0.8 W/ Power Dissipation TJ TSTG -55 +175 Operating and Storage Temperature Range TL 300 Maximum Lead Temperature for Soldering Purposes * *Drain current limited by maximum junction temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Min Typ Max Units Off Characteristics BVDSS ID=250 A, VGS=0V 60 - - V Drain-Source Voltage BVDSS/ TJ ID=250 A, referenced to 25 - 0.06 - V/ Breakdown Voltage Temperature Coefficient VDS=60V,VGS=0V, TC=25 - - 1 A IDSS Zero Gate Voltage Drain - - 100 A VDS=48V, TC=125 Current IGSSF/R VDS=0V, VGS =20V - - 100 nA Gate-body leakage current On-Characteristics VGS(th) VDS = VGS , ID=250A 2.0 3.0 4.0 V Gate Threshold Voltage Static Drain-Source RDS(ON) VGS =10V , ID=25A - 19 25 m On-Resistance gfs VDS = 60V, ID=30A note 4 17 - - S Forward Transconductance Dynamic Characteristics f=1.0MHz, Rg - 1.7 - VDS OPEN Gate Resistance Ciss - 2700 - Input capacitance VDS=25V, Coss VGS =0V, - 1200 - pF Output capacitance f=1.0MHz Crss - 200 - Reverse transfer capacitance Switching Characteristics td(on) - 19 - ns Turn-On delay time VDS=30V, tr - 105 - ns ID=25A, Turn-On rise time RG=25 td(off) - 80 - ns VGS =10V Turn-Off delay time note 4 5 tf - 55 - ns Turn-Off Fall time Qg - 27 - nC VDS =48V , Total Gate Charge ID=25A , Qgs - 5 - nC VGS =10V Gate-Source charge note 4 5 Qgd - 10.2 - nC Gate-Drain charge Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain IS - - 60 A -Source Diode Forward Current Maximum Pulsed ISM - - 240 A Drain-Source Diode Forward Current 0.82 VSD VGS=0V, IS=25A - 1.3 V Drain-Source Diode Forward Voltage trr - 45 - ns Reverse recovery time VGS=0V, IS=25A ,dIF/dt=100A/s (note 4) Qrr - 70 - nC Reverse recovery charge 2 Ver-1.0