Product Information

S8050SDB

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Datasheet
Transistors (NPN/PNP) 500mA 27V TO-92 RoHS
Manufacturer: FeiHong
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0403 ea
Line Total: USD 0.806

0 - Global Stock
MOQ: 20  Multiples: 20
Pack Size: 20

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Availability Price Quantity
0 - Global Stock


Ships to you between
Mon. 19 Jun to Thu. 22 Jun

MOQ : 20
Multiples : 20

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S8050SDB
FeiHong

20 : USD 0.0403
200 : USD 0.0335
600 : USD 0.0285
2000 : USD 0.0244
10000 : USD 0.0238
20000 : USD 0.0234

Read More Specifications

     
Manufacturer
FeiHong
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors-BJT
Rohs
y
Package
TO - 92
Brand Category
Feihong
Current - Collector Ic Max
500 mA
Voltage - Collector Emitter Breakdown Max
27 V
Power - Max
625 mW
Collector Cut-Off Current Icbo
100 nA
Collector-Emitter Breakdown Voltage Vceo
27 V
Power Dissipation Pd
625 mW
Collector Current Ic
500 mA
Dc Current Gain Hfe@Ic Vce
120@50 mA , 1V
Transition Frequency Ft
100MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
600 mV @500 mA , 50 mA
Transistor Type
-
Operating Temperature
+ 150 C @ (Tj)
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Additional Infomation About Product

TRANSISTOR S8050SDB MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 27V High switching speed PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform Package TO-92 ABSOLUTE RATINGS (Tc=25 ) Symbol Parameter Value Unit VCBO 42 V Collector- Base Voltage IE=0 VCEO 27 V Collector- Emitter Voltage IB=0 VEBO 6 V Emitter-Base VoltageIC=0 IC 500m A Collector Current DC PC 625 mW Total Dissipation (TO-92) Tj 150 Junction Temperature Tstg -55~+150 Storage Temperature 1 Ver-1.0 ELECTRICAL CHARACTERISTICS Parameter Tests conditions (min) (typ) (max) Unit V(BR)CBO IC=100uA,IE=0 42 - - V V(BR)CEO IC=2mA,IB=0 27 - V V(BR)EBO IE=100uA,IC=0 6 - - V ICBO VCB=30V, IE=0 - - 100 nA IEBO VEB=5V, IC=0 - - 100 nA Hfe(1) VCE =1V, IC=50mA 120 - 400 - Hfe(2) VCE =1V, IC=500mA 40 - - - - VCE(sat) IC=500mA, IB=50mA - 0.6 V VBE(sat) IC=500mA, IB=50mA - - 1.2 V fT VCE=10V, IC=50mA 100 - - MHz 2 Ver-1.0

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,