Product Information

18N10W

18N10W electronic component of GOFORD

MOSFET TO-252 RoHS
Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4463 ea
Line Total: USD 0.45

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

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0 - Global Stock


Ships to you between
Tue. 30 Apr to Fri. 03 May

MOQ : 1
Multiples : 1

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18N10W
GOFORD

1 : USD 0.4463
10 : USD 0.3354
30 : USD 0.3131
100 : USD 0.2934
500 : USD 0.2835
1000 : USD 0.2811
5040 : USD 0.2699

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Additional Infomation About Product

The electronic part 18N10W with MOSFET TO-252 RoHS manufactured by GOFORD is a Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in a RoHS-compliant TO-252 package. It is designed to offer maximum efficiency and reliability in power switching applications. It features a low on-resistance of up to 18O, a low gate charge of 10nC, and a fast switching speed of 75ns. It has a maximum drain-source breakdown voltage of 800V, and a maximum drain current of 10A. The RoHS certification indicates that the device meets the EU's strict guidelines for hazardous materials.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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