GOFORD 20N06 Description The 20N06 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VD SS R D S( O N ) R D S( O N ) I D (Typ) (Typ) 4.5V 10V 60V 53 m 42m 20 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Marking and pin assignment Special process technology for high ESD capability Totally Lead-Free&Fully RoHS Compliant Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply TO-252 top view Ordering Information Part Number Marking Ca se Packaging 20N06 TO-252 20N06 2500pcs/Reel =25unless otherwise noted) Absolute Maximum Ratings (T C Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous 20 A I D Drain Current-Continuous(T =100) I (100) 14 A C D Pulsed Drain Current I 60 A DM Maximum Power Dissipation P 40 W D Derating factor 0.27 W/ (Note 5) Single pulse avalanche energy E 72 mJ AS Operating Junction and Storage Temperature Range -55 To 175 T ,T J STG Page 1 HTTP://www.gofordsemi.com T EL 0755 - 2 9 961262 F A X 0755 - 2996 146 6GOFORD 20N06 Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case R 3.7 /W JC Electrical Characteristics (T =25unless otherwise noted) C Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV V =0V I =250A 60 - - V DSS GS D Zero Gate Voltage Drain Current I V =60V,V=0V - - 1 A DSS DS GS Gate-Body Leakage Current I V =20V,V=0V - - 100 nA GSS GS DS (Note 3) On Characteristics Gate Threshold Voltage V V =V ,I =250A 1.0 2.0 3.0 V GS(th) DS GS D Drain-Source On-State Resistance R V =10V, I=10A - 42 60 m DS(ON) GS D Drain-Source On-State Resistance R V =4.5V, I=10A - 53 80 m DS(ON) GS D Forward Transconductance g V =5V,I=4.5A 11 - - S FS DS D (Note4) Dynamic Characteristics Input Capacitance C - 500 - PF lss V =30V,V =0V, DS GS Output Capacitance C - 60 - PF oss F=1.0MHz Reverse Transfer Capacitance C - 25 - PF rss (Note 4) Switching Characteristics Turn-on Delay Time t - 5 - nS d(on) Turn-on Rise Time t V =30V,I =2A,R =6.7 - 2.6 - nS r DD D L V =10V,R =3 Turn-Off Delay Time t GS G- 16.1 - nS d(off) Turn-Off Fall Time t - 2.3 - nS f Total Gate Charge Q - 14 nC g V =30V,I =4.5A, DS D Gate-Source Charge Q - 2.9 nC gs V =10V GS Gate-Drain Charge Q - 5.2 nC gd Drain-Source Diode Characteristics (Note 3) Diode Forward Voltage V V =0V,I=20A - 1.2 V SD GS S (Note 2) Diode Forward Current I - - 20 A S Reverse Recovery Time t TJ = 25C, IF =20A - 35 - nS rr (Note3) Reverse Recovery Charge Qrr di/dt = 100A/s - 53 - nC Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25 Page 2 HTTP://www.gofordsemi.com T EL 0755 - 2 9 961262 F A X 0755 - 2996 146 6