Product Information

60N06

60N06 electronic component of GOFORD

Datasheet
MOSFET N Trench 60V 60A (Tc) 2.5V @ 250uA 20 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS

Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3519 ea
Line Total: USD 0.35

1046 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
304 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

60N06
GOFORD

1 : USD 0.324
10 : USD 0.2652
30 : USD 0.2399
100 : USD 0.2085
500 : USD 0.1945
1000 : USD 0.1632

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The 60N06 is a MOSFET N Trench transistor manufactured by GOFORD. This device is a high power MOSFET with an operating voltage of up to 60V and a peak current rating of 60A. The device features a TO-252-2 DPAK package and is RoHS compliant. This device includes a 2.5V threshold voltage, 250uA gate capacitance, and a low 20mΩ on resistance rating with a 20A source current.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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