G08N06S GOFORD Description The G08N06S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features VD SS R D S( O N ) R D S( O N ) I D (Typ) (Typ) 10V 4.5V 60V 24 m 30m 6 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Marking and pin assignment RoHS Compliant Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply SOP-8 top view Ordering Information Part Number Packaging Marking Case G08N06S G08N06 SOP-8 4000pcs/Reel Absolute Maximum Ratings (T =25unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous I D 6 A Drain Current-Continuous(T =100) I (100 C D ) A 4.2 Pulsed Drain Current I 32 A DM Maximum Power Dissipation P 2 W D Operating Junction and Storage Temperature Range T ,T -55 To 150 J STG Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Ambient R 62.5 /W JA HTTP://www.gofordsemi.com T EL 0755 - 2 9 961262 F A X 0755 - 2996 146 6 Page 1 G08N06S GOFORD Electrical Characteristics (T =25 unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV V =0V I =250A 60 - - V DSS GS D Zero Gate Voltage Drain Current I V =60V,V=0V - - 1 A DSS DS GS Gate-Body Leakage Current I V =20V,V=0V - - 100 nA GSS GS DS (Note 3) On Characteristics Gate Threshold Voltage V V =V ,I =250 GS(th) DS GS D A 1 1.7 2.5 V R V =10V, I DS(ON) GS D =3A, - 24 30 m Drain-Source On-State Resistance R V =4.5V, I =3A, - DS(ON) GS D 30 40 m Forward Transconductance g V =5V,I=3A 11 FS DS D - - S (Note4) Dynamic Characteristics Input Capacitance C - 979 - pF lss V =30V,V =0V, DS GS Output Capacitance C - 120 - pF oss F=1.0MHz Reverse Transfer Capacitance C - 100 - pF rss (Note 4) Switching Characteristics Turn-on Delay Time t - 5.2 - nS d(on) Turn-on Rise Time t - V =30V, R =6.7 3 - nS r DD L Turn-Off Delay Time t - V =10V,R =3 17 - nS d(off) GS G Turn-Off Fall Time t - 2.5 - nS f Total Gate Charge Q - 22 nC g - V =30V,I =5A, DS D Gate-Source Charge Q - 3.3 nC gs - V =10V GS Gate-Drain Charge Q - 5.2 nC gd - Drain-Source Diode Characteristics (Note 3) Diode Forward Voltage V V =0V,I =3A, SD GS S - - 1.2 V (Note 2) Diode Forward Current I - - 5 A S Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25,V =30V,V =10V,L=0.5mH,Rg=25 DD G HTTP://www.gofordsemi.com T EL 0755 - 2 9 961262 F A X 0755 - 2996 146 6 Page 2