Product Information

G28N03D3

G28N03D3 electronic component of GOFORD

Datasheet
30V 28A 8mΩ@10V,16A 20.5W 1.5V@250uA 144pF@15V N Channel 891pF@15V 15nC@10V -55℃~+150℃@(Tj) DFN3x3-8L MOSFETs ROHS

Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1659 ea
Line Total: USD 0.8295

281 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
281 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 5
Multiples : 5

Stock Image

G28N03D3
GOFORD

5 : USD 0.1712
50 : USD 0.1504
150 : USD 0.1416
500 : USD 0.1304
2500 : USD 0.1196
5000 : USD 0.1166

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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The G28N03D3 is an N-channel MOSFET manufactured by Goford and is compliant with ROHS regulations. This electronic part has a voltage rating of 30V, a current rating of 28A, a low RDS(ON) of 8mO at 10V, and a maximum power dissipation of 20.5W. The gate-source capacitance is 144pF at 15V, the input capacitance is 891pF at 15V, the Qg is 15nC at 10V, and the operating temperature range is from -55? to +150? at a junction temperature of Tj. It is packaged in a DFN3x3-8L form factor.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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