Preliminary Technical Information TM V = 1000V HiPerFET IXFH14N100Q2 DSS I = 14A Power MOSFETs D25 R 950m Q2-Class DS(on) t 300ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q g Low intrinsic R , low t TO-247 (IXFH) g rr Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS G (TAB) D V Continuous 30 V S GSS V Transient 40 V GSM I T = 25C 14 A D25 C G = Gate D = Drain I T = 25C, pulse width limited by T 56 A DM C JM S = Source TAB = Drain I T = 25C 14 A A C E T = 25C 2.5 J AS C dV/dt I I , V V , T 150C 20 V/ns S DM DD DSS J P T = 25C 500 W Features D C T -55 ... +150 C J Double metal process for low gate T 150 C JM resistance T -55 ... +150 C International standard package stg Epoxy meet UL 94 V-0, flammability T 1.6mm (0.063 in) from case for 10s 300 C L classification M Mounting torque 1.13/10 Nm/lb.in. d Avalanche energy and current rated Fast intrinsic Rectifier Weight 6 g Applications DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Symbol Test Conditions Characteristic Values Pulse generation (T = 25C, unless otherwise specified) Min. Typ. Max. J Laser drivers V V = 0V, I = 250A 1000 V DSS GS D V V = V , I = 4mA 3.0 5.5 V GS(th) DS GS D Advantages I V = 30V, V = 0V 200 nA GSS GS DS I V = V 25 A Easy to mount DSS DS DSS V = 0V T = 125C 1 mA Space savings GS J High power density R V = 10V, I = 0.5 I Note 1 950 m DS(on) GS D D25, 2008 IXYS CORPORATION, All rights reserved DS99073A(5/08) IXFH14N100Q2 Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 15 28 S fs DS D D25 C 2800 pF iss C V = 0V, V = 25V, f = 1MHz 287 pF P oss GS DS 1 2 3 C 100 pF rss t Resistive Switching Times 12 ns d(on) t V = 10V, V = 0.5 V , I = 0.5 I 10 ns r GS DS DSS D D25 t R = 2 (External) 28 ns d(off) G t 12 ns e f Terminals: 1 - Gate 2 - Drain Q 83 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 Dim. Millimeter Inches Min. Max. Min. Max. Q 40 nC gd A 4.7 5.3 .185 .209 R 0.25 C/W A 2.2 2.54 .087 .102 thJC 1 A 2.2 2.6 .059 .098 2 R 0.21 C/W thCK b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode L1 4.50 .177 Symbol Test Conditions Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, unless otherwise specified) Min. Typ. Max. J Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 I V = 0V 14 A S GS I Repetitive, pulse width limited by T 56 A SM JM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t 300 ns rr I = 25A, -di/dt = 100 A/s, V = 100 V Q 0.8 C F R RM I 7 A RM Notes: 1. Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537