TM TrenchT2 IXFK520N075T2 V = 75V DSS TM TM GigaMOS HiperFET I = 520A IXFX520N075T2 D25 Power MOSFET R 2.2m DS(on) N-Channel Enhancement Mode TO-264 (IXFK) Avalanche Rated Fast Intrinsic Diode G D S Symbol Test Conditions Maximum Ratings Tab V T = 25 C to 175 C75V DSS J V T = 25 C to 175 C, R = 1M 75 V DGR J GS PLUS247 (IXFX) V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C (Chip Capability) 520 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25 C, Pulse Width Limited by T 1350 A G DM C JM D Tab S I T = 25 C 200 A A C E T = 25 C3J AS C G = Gate D = Drain P T = 25 C 1250 W S = Source Tab = Drain D C T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-264) 1.13/10 Nm/lb.in High Current Handling Capability d Fast Intrinsic Diode F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Avalanche Rated Weight TO-264 10 g Low R DS(on) PLUS247 6 g Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = 3mA 75 V DSS GS D V V = V , I = 8mA 2.5 5.0 V Applications GS(th) DS GS D I V = 20V, V = 0V 200 nA GSS GS DS DC-DC Converters and Off-Line UPS Primary-Side Switch I V = V , V = 0V 25 A DSS DS DSS GS High Speed Power Switching T = 150C 2 mA J Applications R V = 10V, I = 100A, Notes 1 & 2 2.2 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS100211B(4/18)IXFK520N075T2 IXFX520N075T2 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 65 105 S fs DS D C 41 nF iss C V = 0V, V = 25V, f = 1MHz 4150 pF oss GS DS C 530 pF rss R Gate Input Resistance 1.36 GI t 48 ns d(on) Resistive Switching Times t 36 ns PINS: r 1 - Gate V = 10V, V = 0.5 V , I = 200A GS DS DSS D 2,4 - Drain t 80 ns d(off) 3 - Source R = 1 (External) G t 35 ns f Q 545 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 177 nC gs GS DS DSS D DSS Q 135 nC gd R 0.12 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J TM PLUS247 Outline I V = 0V 520 A S GS I Repetitive, Pulse Width Limited by T 1600 A SM JM V I = 100A, V = 0V, Note 1 1.25 V SD F GS t 150 ns I = 150A, V = 0V rr F GS I 7 A RM -di/dt = 100A/ s Q 357 nC V = 37.5V RM R PINS: 1 - Gate 2,4 - Drain 3 - Source Notes 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Includes lead resistance. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537