Product Information

LPM2302B3F

LPM2302B3F electronic component of LOWPOWER

Datasheet
MOSFET N Trench 20V 3.5A 1V @ 250uA 50 mΩ @ 3.5A,4.5V SOT23-3 RoHS

Manufacturer: LOWPOWER
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0572 ea
Line Total: USD 0.57

0 - Global Stock
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0 - Global Stock


Ships to you between
Tue. 30 Apr to Fri. 03 May

MOQ : 10
Multiples : 10

Stock Image

LPM2302B3F
LOWPOWER

10 : USD 0.0586
100 : USD 0.0486
300 : USD 0.0436
3000 : USD 0.0344
6000 : USD 0.0313
9000 : USD 0.0299

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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LPM2302B3F with MOSFET N Trench 20V 3.5A 1V @ 250uA 50 m? @ 3.5A,4.5V SOT23-3 RoHS is an advanced low dissipation N-channel MOSFET manufactured by LOWPOWER. It is designed to give superior performance in applications that require low RDS(on) and fast switching speed. It has a maximum drain-source voltage of 20V, a maximum drain current of 3.5A at 1V, 50m? at 3.5A, and 4.5V at 250uA. It comes with an SOT23-3 package and is RoHS compliant. This part is ideal for low power load switch and efficiency-critical applications, such as power transformers, battery chargers, and LED lighting.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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