2N1485 Microchip

2N1485 electronic component of Microchip
2N1485 Microchip
2N1485 Bipolar Transistors - BJT
2N1485  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N1485 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N1485 Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N1485
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Power BJT
Datasheet: 2N1485 Datasheet (PDF)
Price (USD)
1: USD 53.163 ea
Line Total: USD 53.16 
Availability : 36
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 53.163
100$ 53.086

Availability 36
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 53.163
100$ 53.086

   
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RoHS - XON
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We are delighted to provide the 2N1485 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N1485 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N1483 2N1486 Qualified Levels: JAN and JANTX NPN Silicon Medium Power Transistor Available on commercial Qualified per MIL-PRF-19500/180 versions DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website 2N1483 2N1486 MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap TERMINALS: Alloy 52 with nickel plating and hot solder dip (Sn63/Pb37) or matte-tin plating for RoHS compliance (available on commercial grade only). MARKING: Part number, date code, manufacturers ID POLARITY: See Package Dimensions on last page. PART NOMENCLATURE JAN 2N1483 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) Blank = Commercial Blank = non-RoHS Compliant JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Common-base open-circuit output capacitance. C obo I Collector cutoff current, base open. CEO I Collector cutoff current, circuit between base and emitter. CEX I Emitter cutoff current, collector open. EBO h Common-emitter static forward current transfer ratio. FE V Collector-emitter voltage, base open. CEO V Collector-emitter voltage, emitter open. CBO V Emitter-base voltage, collector open. EBO T4-LDS-0299, Rev. 1 (7/29/13) 2013 Microsemi Corporation Page 2 of 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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