JANS2N2907AUA Microchip

JANS2N2907AUA electronic component of Microchip
JANS2N2907AUA Microchip
JANS2N2907AUA Bipolar Transistors - BJT
JANS2N2907AUA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of JANS2N2907AUA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANS2N2907AUA Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. JANS2N2907AUA
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Small-Signal BJT
Datasheet: JANS2N2907AUA Datasheet (PDF)
Price (USD)
1: USD 406.4875 ea
Line Total: USD 406.49 
Availability : 43
  
Ship by Tue. 12 Aug to Mon. 18 Aug
QtyUnit Price
1$ 406.4875
5$ 400.3875
10$ 394.3875
13$ 388.4625
25$ 213.8875
38$ 148.5375
50$ 145.5625

Availability 43
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 406.4875
5$ 400.3875
10$ 394.3875
13$ 388.4625
25$ 213.8875
38$ 148.5375
50$ 145.5625


Availability 43
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 569.0825
5$ 560.5425
10$ 552.1425
13$ 543.8475
25$ 299.4425

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the JANS2N2907AUA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANS2N2907AUA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 60 Vdc CEO Collector-Base Voltage V 60 Vdc CBO Emitter-Base Voltage V 5.0 Vdc EBO Collector Current I 600 mAdc C Total Power Dissipation @ T = +25C P 0.5 W A T TO-18 (TO-206AA) 2N2906A, 2N2907A Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage 4 PIN V 60 Vdc (BR)CEO I = 10mAdc 2N2906AUA, 2N2907AUA C Collector-Base Cutoff Current V = 60Vdc I 10 Adc CB CBO V = 50Vdc 10 Adc CB Emitter-Base Cutoff Current V = 4.0Vdc I 50 Adc EB EBO V = 5.0Vdc 10 Adc EB Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) T4-LDS-0059 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (4) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 75 I = 1.0mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 175 C CE 2N2907A, L, UA, UB, UBC 100 450 I = 10mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 h C CE FE 2N2907A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 120 C CE 2N2907A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 50 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc 0.4 CE(sat) C B I = 500mAdc, I = 50mAdc 1.6 C B Base-Emitter Saturation Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.3 C B I = 500mAdc, I = 50mAdc 2.6 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 100 Magnitude of SmallSignal Forward Current Transfer Ratio |h | fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.0 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 30 pF ibo V = 2.0Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 45 s on V = 30Vdc; I = 150mAdc; I = 50mAdc CC C B1 Turn-Off Time t 300 s off V = 30Vdc; I = 150mAdc; I = -I = 50mAdc CC C B1 B2 (4) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0059 Rev. 2 (100247) Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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