X-On Electronics has gained recognition as a prominent supplier of JANTX2N5667 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. JANTX2N5667 bipolar transistors - bjt are a product manufactured by Microchip. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

JANTX2N5667 Microchip

JANTX2N5667 electronic component of Microchip
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See Product Specifications
Part No.JANTX2N5667
Manufacturer: Microchip
Category:Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: JANTX2N5667 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 38.09 ea
Line Total: USD 38.09

Availability - 137
Ships to you between
Mon. 03 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22 - WHS 1


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 37.089

137 - WHS 2


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 36.855
10 : USD 36.465
25 : USD 36.075
100 : USD 35.685

10 - WHS 3


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 2
Multiples : 1
2 : USD 52.9545
5 : USD 50.8626
10 : USD 49.7201

137 - WHS 4


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 38.09
10 : USD 37.726
25 : USD 37.362
100 : USD 35.776

     
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RoHS - XON
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Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
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Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
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Emitter-Base Voltage
Package Type
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Operating Temperature Classification
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5666 2N5667 JAN 2N5665 2N5666S 2N5667S JANTX 2N5666U3 JANTV JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C 2N5664 2N5665 Parameters / Test Conditions Symbol Unit 2N5666, S 2N5667, S Collector-Emitter Voltage V 200 300 Vdc CEO Collector-Base Voltage V 250 400 Vdc CBO TO-66 (TO-213AA) Emitter-Base Voltage V 6.0 Vdc EBO 2N5664, 2N5665 Base Current I 1.0 Adc B Collector Current I 5.0 Adc C 2N5664 2N5666, S 2N5666U3 2N5665 2N5667, S Total 1/ T = +25C 2.5 1.2 1.5 A P W T Power Dissipation T = +100C 30 15 35 C Operating & Storage Junction TO-5 T , T -65 to +200 C J stg Temperature Range 2N5666, 2N5667 Note: 1) Consult 19500/455 for thermal derating curves. ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) C Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage TO-39 (TO-205AD) I = 10mAdc 2N5664, 2N5666 250 C V Vdc (BR)CER 2N5666S, 2N5667S 2N5665, 2N5667 400 Emitter-Base Breakdown Voltage V Vdc (BR)EBO 6.0 I = 10Adc E Collector-Emitter Cutoff Current V = 200Vdc 2N5664, 2N5666 0.2 CE I Adc CES V = 300Vdc 2N5665, 2N5667 0.2 CE U-3 Collector-Base Cutoff Current 2N5666U3 V = 200Vdc 2N5664, 2N5666 0.1 Adc CB V = 250Vdc 1.0 mAdc CB I CBO V = 300Vdc 2N5665, 2N5667 0.1 Adc CB V = 400Vdc 1.0 mAdc CB T4-LDS-0062 Rev. 1 (081095) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 ELECTRICAL CHARACTERISTICS (cont) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS Forward-Current Transfer Ratio I = 0.5Adc, V = 2.0Vdc 2N5664, 2N5666 40 C CE 2N5665, 2N5667 25 I = 1.0Adc, V = 5.0Vdc 2N5664, 2N5666 40 120 C CE 2N5665, 2N5667 25 75 h FE I = 3.0Adc, V = 5.0Vdc 2N5664, 2N5666 15 C CE 2N5665, 2N5667 10 I = 5.0Adc, V = 5.0Vdc All Types 5.0 C CE Collector-Emitter Saturation Voltage I = 3.0Adc, I = 0.3Adc 2N5664, 2N5666 0.4 C B I = 3.0Adc, I = 0.6Adc 2N5665, 2N5667 V 0.4 Vdc C B CE(sat) I = 5.0Adc, I = 1.0Adc All Types 1.0 C B Base-Emitter Saturation Voltage I = 3.0Adc, I = 0.3Adc 2N5664, 2N5666 1.2 C B V Vdc BE(sat) I = 3.0Adc, I = 0.6Adc 2N5665, 2N5667 1.2 C B I = 5.0Adc, I = 1.0Adc All Types 1.5 C B DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio h fe I = 0.5Adc, V = 5.0Vdc, f = 10MHz 2.0 7.0 C CE Output Capacitance C pF obo 120 V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time V = 100Vdc I = 1.0Adc I = 30mAdc CC C B1 t 0.25 s on Turn-Off Time V = 100Vdc I = 1.0Adc I = -I = 50mAdc 2N5664, 2N5666 1.5 CC C B1 B2 t s off 2N5665, 2N5667 2.0 T4-LDS-0062 Rev. 1 (081095) Page 2 of 3

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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