TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AUB 2N4449 JAN 2N2369AU 2N2369AUBC * JANTX 2N2369AUA JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit 2N2369A / U / UA 15 Collector-Emitter Voltage V Vdc CEO 2N4449 / UB / UBC 20 2N2369A / U / UA 4.5 TO-18 (TO-206AA) Emitter-Base Voltage V Vdc EBO 2N4449 / UB / UBC 6.0 2N2369A Collector-Base Voltage V 40 Vdc CBO Collector-Emitter Voltage I 40 Vdc CES (1) Total Power Dissipation 2N2369A 2N4449 0.36 (1, 5) T = +25C UA, UB, UBC P 0.36 W A T (4) U 0.50 TO-46 (TO-206AB) Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg 2N4449 THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Value Unit Thermal Resistance, Ambient-to-Case 2N2369A 2N4449 400 C/W R JA (5) UA, UB, UBC 400 SURFACE MOUNT U 350 UA Note: 1. Derate linearly 2.06 mW/C above T = +25C. A 2. Derate linearly 4.76 mW/C above T = +95C. C 3. Derate linearly 3.08 mW/C above T = +70C. C 4. Derate linearly 3.44 mW/C above T = +54.5C. A 5. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads. SURFACE MOUNT UB & UBC ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A (UBC = Ceramic Lid Version) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 15 Vdc (BR)CEO I = 10mAdc C SURFACE MOUNT Collector-Base Cutoff Current U (Dual Transistor) I 0.4 Adc CES V = 20Vdc CE T4-LDS-0057 Rev. 2 (081394) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERISTICS Emitter-Base Breakdown Voltage V = 4.5Vdc 10 EB I Adc EBO Emitter-Base Cutoff Current V = 4.0Vdc 0.25 EB Collector- Base Breakdown Voltage V = 40Vdc 10 CB I Adc CBO Collector-Base Cutoff Current V = 32Vdc 0.2 CB (1) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 10mAdc, V = 0.35Vdc 40 120 C CE h FE I = 30mAdc, V = 0.4Vdc 30 120 C CE I = 10mAdc, V = 1.0Vdc 40 120 C CE I = 100mAdc, V = 1.0Vdc 20 120 C CE Collector-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.20 C B V Vdc CE(sat) I = 30mAdc, I = 3.0mAdc 0.25 C B I = 100mAdc, I = 10mAdc 0.45 C B Base-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.70 0.85 C B V Vdc BE(sat) I = 30mAdc, I = 3.0mAdc 0.90 C B I = 100mAdc, I = 10mAdc 0.80 1.20 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio h 5.0 10 fe I = 10mAdc, V = 10Vdc, f = 100MHz C CE Output Capacitance C 4.0 pF obo V = 5.0Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 5.0 pF ibo V = 0.5Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 12 s on I = 10mAdc I = 3.0mAdc, I = -1.5mAdc C B1 B2 Turn-Off Time t 18 s off I = 10mAdc I = 3.0mAdc, I = -1.5mAdc C B1 B2 Charge Storage Time t 13 s S I = 10mAdc I = 10mAdc, I = 10mAdc C B1 B2 (1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0057 Rev. 2 (081394) Page 2 of 2