X-On Electronics has gained recognition as a prominent supplier of JANTXV2N2907AUB Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANTXV2N2907AUB Bipolar Transistors - BJT are a product manufactured by Microchip. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

JANTXV2N2907AUB Microchip

JANTXV2N2907AUB electronic component of Microchip
JANTXV2N2907AUB Microchip
JANTXV2N2907AUB Bipolar Transistors - BJT
JANTXV2N2907AUB  Semiconductors

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See Product Specifications
Part No. JANTXV2N2907AUB
Manufacturer: Microchip
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.6A 3-Pin UB
Datasheet: JANTXV2N2907AUB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
194: USD 7.6878 ea
Line Total: USD 1491.43 
Availability - 0
MOQ: 194  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 13
Multiples : 1
13 : USD 10.6575
25 : USD 9.6469
50 : USD 9.3975
100 : USD 9.1481
250 : USD 8.82
500 : USD 8.6888
1000 : USD 8.5575

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 194
Multiples : 1
194 : USD 7.6878
1940 : USD 7.3771
19400 : USD 7.2295

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 193
Multiples : 1
193 : USD 8.8974
250 : USD 8.8082
500 : USD 8.7203
1000 : USD 8.6336
2000 : USD 8.568

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 193
Multiples : 1
193 : USD 8.8974
250 : USD 8.8082
500 : USD 8.7203
1000 : USD 8.6336
2000 : USD 8.568

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 3
Multiples : 3
3 : USD 8.379
10 : USD 8.0451
25 : USD 8.0451
75 : USD 8.0451
150 : USD 8.0451

0
Ship by Fri. 04 Jul to Wed. 09 Jul
MOQ : 1
Multiples : 1
1 : USD 16.4437
10 : USD 15.8846

0
Ship by Wed. 25 Jun to Fri. 27 Jun
MOQ : 1
Multiples : 1
1 : USD 9.4467
10 : USD 8.7862
25 : USD 8.6122
250 : USD 8.3512
500 : USD 8.1011
1000 : USD 7.8618
5000 : USD 7.6227
10000 : USD 7.3943

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 5
Multiples : 5
5 : USD 20.0495
25 : USD 19.0845
50 : USD 18.9788
100 : USD 18.8907
250 : USD 18.8026

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 1
Multiples : 1
1 : USD 9.748
100 : USD 9.716

0
Ship by Fri. 27 Jun to Thu. 03 Jul
MOQ : 10
Multiples : 10
10 : USD 13.9467
25 : USD 12.2595
50 : USD 11.7065
100 : USD 11.2042

   
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We are delighted to provide the JANTXV2N2907AUB from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTXV2N2907AUB and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 60 Vdc CEO Collector-Base Voltage V 60 Vdc CBO Emitter-Base Voltage V 5.0 Vdc EBO Collector Current I 600 mAdc C Total Power Dissipation T = +25C P 0.5 W A T TO-18 (TO-206AA) 2N2906A, 2N2907A Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage 4 PIN V 60 Vdc (BR)CEO I = 10mAdc 2N2906AUA, 2N2907AUA C Collector-Base Cutoff Current V = 60Vdc I 10 Adc CB CBO V = 50Vdc 10 Adc CB Emitter-Base Cutoff Current V = 4.0Vdc I 50 Adc EB EBO V = 5.0Vdc 10 Adc EB Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) T4-LDS-0059 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (4) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 75 I = 1.0mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 175 C CE 2N2907A, L, UA, UB, UBC 100 450 I = 10mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 h C CE FE 2N2907A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 120 C CE 2N2907A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 50 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc 0.4 CE(sat) C B I = 500mAdc, I = 50mAdc 1.6 C B Base-Emitter Saturation Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.3 C B I = 500mAdc, I = 50mAdc 2.6 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2906A, L, UA, UB, UBC 40 C CE 2N2907A, L, UA, UB, UBC 100 Magnitude of SmallSignal Forward Current Transfer Ratio h fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.0 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 30 pF ibo V = 2.0Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 45 s on V = 30Vdc I = 150mAdc I = 50mAdc CC C B1 Turn-Off Time t 300 s off V = 30Vdc I = 150mAdc I = -I = 50mAdc CC C B1 B2 (4) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0059 Rev. 2 (100247) Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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