X-On Electronics has gained recognition as a prominent supplier of JANTXV2N3439 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. JANTXV2N3439 bipolar transistors - bjt are a product manufactured by Microchip. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

JANTXV2N3439

JANTXV2N3439 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.JANTXV2N3439
Manufacturer: Microchip
Category:Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Transistor
Datasheet: JANTXV2N3439 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

93: USD 15.6941 ea
Line Total: USD 1459.55

Availability - 0
MOQ: 93  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 93
Multiples : 1
93 : USD 15.6941
930 : USD 15.0561
9300 : USD 14.7549

0 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 20.8757
4 : USD 19.3846
15 : USD 18.639
40 : USD 17.8935
100 : USD 17.8935

0 - WHS 3


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 16.0381

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the JANTXV2N3439 Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the JANTXV2N3439 Bipolar Transistors - BJT.

2N3439 thru 2N3440 Qualified Levels: NPN LOW POWER SILICON JAN, JANTX, Available on TRANSISTOR JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website 2N3439 thru 2N3440 MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip or RoHS compliant pure tin (commercial grade only) plate over gold. MARKING: Part number, date code, manufacturers ID. POLARITY: NPN (see package outline). WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3439 (e3) Reliability Level RoHS Compliance (available on commercial grade only) JAN = JAN Level JANTX = JANTX Level e3 = RoHS compliant with pure JANTXV = JANTXV Level tin plate JANS = JANS Level e4 = RoHS compliant with gold Blank = Commercial plate Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Common-base open-circuit output capacitance. C obo I Collector cutoff current, base open. CEO I Collector cutoff current, circuit between base and emitter. CEX I Emitter cutoff current, collector open. EBO h Common-emitter static forward current transfer ratio. FE V Collector-emitter voltage, base open. CEO V Collector-emitter voltage, emitter open. CBO V Emitter-base voltage, collector open. EBO LDS-0022, Rev. 4 (111683) 2011 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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