Jantxv2N5153/TR

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 80 Vdc CEO Collector-Base Voltage V 100 Vdc CBO Emitter-Base Voltage V 5.5 Vdc EBO Collector Current I 2.0 Adc C Total Power Dissipation (1) 2N5151, 2N5153, L T = +25C 1.0 A (2) TO-5 2N5151, 2N5153, L T = +25C P 10 W C T (3) 2N5151L, 2N5153L 2N5151U3, 2N5153U3 T = +25C 1.16 A (4) (See Figure 1) 2N5151U3, 2N5153U3 T = +25C 100 C Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg 10 Thermal Resistance, Junction-to Case C/W R JC 1.75 (U3) Note: 1) Derate linearly 5.7mW/C for T > +25 A 2) Derate linearly 66.7mW/C for T > +25 A 3) Derate linearly 6.63mW/C for T > +25 A 4) Derate linearly 571mW/C for T > +25 A ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A TO-39 (TO-205AD) 2N5151, 2N5153 Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 80 Vdc (BR)CEO I = 100mAdc, I = 0 C B Emitter-Base Cutoff Current V = 4.0Vdc, I = 0 I 1.0 Adc EB C EBO V = 5.5Vdc, I = 0 1.0 mAdc EB C Collector-Emitter Cutoff Current V = 60Vdc, V = 0 I 1.0 Adc CE BE CES U-3 V = 100Vdc, V = 0 1.0 mAdc CE BE 2N5151U3, 2N5153U3 Collector-Base Cutoff Current I 50 Adc CEO V = 40Vdc, I = 0 CE B T4-LDS-0132 Rev. 1 (091476) Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 ELECTRICAL CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS Forward-Current Transfer Ratio I = 50mAdc, V = 5Vdc 2N5151 20 C CE 2N5153 50 I = 2.5Adc, V = 5Vdc 2N5151 30 90 C CE h FE 2N5153 70 200 I = 5Adc, V = 5Vdc 2N5151 20 C CE 2N5153 40 Collector-Emitter Saturation Voltage I = 2.5Adc, I = 250mAdc 0.75 V C B Vdc CE(sat) I = 5.0Adc, I = 500mAdc 1.5 C B Base-Emitter Voltage Non-Saturation V 1.45 Vdc BE I = 2.5Adc, V = 5Vdc C CE Base-Emitter Saturation Voltage I = 2.5Adc, I = 250mAdc 1.45 C B V Vdc BE(sat) I = 5.0Adc, I = 500mAdc 2.2 C B DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio I = 500mAdc, V = 5Vdc, f = 10MHz 2N5151 h 6 C CE fe 2N5153 7 Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio h fe I = 100mAdc, V = 5Vdc, f = 1kHz 2N5151 20 C CE 50 2N5153 Output Capacitance C 250 obo pF V = 10Vdc, I = 0, f = 1.0MHz CB E SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time I = 5Adc, I = 500mAdc C B1 I = -500mAdc t 0.5 s B2 on R = 6 L V = 3.7Vdc BE(OFF) Turn-Off Time I = 5Adc, I = 500mAdc C B1 I = -500mAdc t 1.5 s B2 off R = 6 L V = 3.7Vdc BE(OFF) T4-LDS-0132 Rev. 1 (091476) Page 2 of 4