BC69-16PA,115 Nexperia

BC69-16PA,115 electronic component of Nexperia
BC69-16PA,115 Nexperia
BC69-16PA,115 Bipolar Transistors - BJT
BC69-16PA,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC69-16PA,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC69-16PA,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC69-16PA,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: NXP Semiconductors Bipolar Transistors - BJT 20 V, 2 A PNP medium power transistors
Datasheet: BC69-16PA,115 Datasheet (PDF)
Price (USD)
1: USD 0.5175 ea
Line Total: USD 0.52 
Availability : 0
  
QtyUnit Price
1$ 0.5175
10$ 0.3912
100$ 0.2231
500$ 0.1496
1000$ 0.1056
3000$ 0.0979
6000$ 0.0968
9000$ 0.0869
24000$ 0.0858

Availability 0
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1399
6000$ 0.1269
15000$ 0.1157
30000$ 0.1082
75000$ 0.097


Availability 0
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5175
10$ 0.3912
100$ 0.2231
500$ 0.1496
1000$ 0.1056
3000$ 0.0979
6000$ 0.0968
9000$ 0.0869
24000$ 0.0858

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC69-16PA,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC69-16PA,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP69 BC869 BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview 1 Type number Package NPN complement Nexperia JEITA JEDEC BCP69 SOT223 SC-73 - BCP68 BC869 SOT89 SC-62 TO-243 BC868 BC69PA SOT1061 - - BC68PA 1 Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators Power management High-side switches MOSFET drivers Battery-driven devices Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit collector-emitter voltage open base - - 20 V V CEO collector current - - 2A I C peak collector current single pulse t 1ms - - 3A I CM pBCP69 BC869 BC69PA Nexperia 20 V, 2 A PNP medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit 1 h DC current gain V = 1V 85 - 375 FE CE I = 500 mA C 1 h selection -16 V = 1V 100 - 250 FE CE I = 500 mA C 1 h selection -25 V = 1V 160 - 375 FE CE I = 500 mA C 1 Pulse test: t 300 s = 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT223 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 SOT89 1emitter 2 2 collector 3base 3 321 1 006aaa231 SOT1061 1base 3 3 2emitter 3 collector 1 2 sym013 12 Transparent top view BCP69 BC869 BC69PA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 7 12 October 2011 2 of 24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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